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Method for growing upright three-dimensional netlike noble metal nano-plate on boron-doped diamond substrate

A technology of boron-doped diamond and three-dimensional mesh, which is applied in the field of preparation of working electrodes, can solve the problems of low catalytic activity of boron-doped diamond, and achieve the effects of overcoming low catalytic activity, good support function, and broad market development prospects

Inactive Publication Date: 2009-11-04
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention uses boron-doped diamond film as the base material. This material has the advantages of wide potential window, low background current, stable surface state, good reproducibility and corrosion resistance, etc., and is an ideal electrode material. At the same time, using this technology to construct upright three-dimensional network-like noble metal nanosheets on the substrate can not only give full play to the above-mentioned advantages of boron-doped diamond, but also overcome the shortcoming of low catalytic activity of boron-doped diamond; The noble metal has a good supporting effect, which can improve the electrocatalytic activity and anti-poisoning ability of the noble metal; in addition, the three-dimensional network shape not only ensures a large surface area, but also ensures the full utilization of active molecules in the electrochemical reaction process.

Method used

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  • Method for growing upright three-dimensional netlike noble metal nano-plate on boron-doped diamond substrate
  • Method for growing upright three-dimensional netlike noble metal nano-plate on boron-doped diamond substrate

Examples

Experimental program
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Effect test

Embodiment 1

[0024] Set the surface area to 1 cm 2 The boron-doped diamond was heat-treated in aqua regia solution at 90°C for 5 minutes, then ultrasonically treated in ethanol solution for 3 minutes, and then cleaned with deionized water. Then place the treated boron-doped diamond electrode in 0.5mol / L H 2 SO 4 The medium was used as the working electrode, the platinum sheet was used as the counter electrode, and the saturated calomel electrode (SCE) was used as the reference electrode. Anodized for 45 minutes at a potential of 3.2V. Then rinse with deionized water twice.

[0025] Electroplating solution is 0.5mol / L ZnCl 2 The supporting electrolyte is 6mol / L KCl. The electrodeposition experiment adopts a three-electrode system, with the surface-treated boron-doped diamond as the working electrode, the platinum sheet as the auxiliary electrode, and the saturated calomel electrode as the reference electrode. A constant current density of 0.15Acm was used -2 Conditions of deposition ...

Embodiment 2

[0027] Set the surface area to 1 cm 2 The boron-doped diamond was heat-treated in aqua regia solution at 70°C for 10 minutes, then ultrasonically treated in ethanol solution for 3 minutes, and then cleaned with deionized water. Then place the processed boron-doped diamond electrode in 1mol / L H 2 SO 4 The medium was used as the working electrode, the platinum sheet was used as the counter electrode, and the saturated calomel electrode (SCE) was used as the reference electrode. Anodized at 3.0V potential for 40 minutes. Then rinse with deionized water twice.

[0028] The electroplating solution is 0.25mol / L ZnCl 2 The supporting electrolyte is 3mol / L KCl. The electrodeposition experiment adopts a three-electrode system, with the surface-treated boron-doped diamond as the working electrode, the platinum sheet as the auxiliary electrode, and the saturated calomel electrode as the reference electrode. A constant current density of 0.1Acm was used -2 Conditions of deposition ...

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Abstract

The invention relates to a method for growing an upright three-dimensional netlike noble metal nano-plate on a boron-doped diamond substrate, which comprises the following steps: firstly, when electro-deposition is used in an electrochemical technique, using hydrogen bubbles generated on the surface of a boron-doped diamond film substrate material as a dynamic template so as to obtain an upright three-dimensional netlike nano metal plate; and secondly, in the process of performing a chemical method, using the upright three-dimensional netlike nano metal plate as a template, and through substitution reactions, using high valent noble metal to replace the upright three-dimensional netlike nano metal plate so as to obtain the upright three-dimensional netlike noble metal nano-plate on a boron-doped diamond film. The special structure obtained by the method not only can give full play to the advantages of the boron-doped diamond, but also can greatly improve the specific surface area of the noble metal and effectively promote the diffusion of active reaction molecules in a hole pipeline by a netlike nano structure. Simultaneously, the special combination ensures that a working electrode obtains high electrochemical properties in material types and structural shapes.

Description

technical field [0001] The invention belongs to the field of electrochemistry and relates to a preparation method of a working electrode. Background technique [0002] The core of the electrochemical reaction is a high-performance, high-stability electrode material, and the electrochemical performance of the electrode is mainly determined by the material it consists of and the microscopic morphology of the electrode. The acquisition of high-performance working electrodes has always been an industry technology. important aspect of human effort. Contents of the invention [0003] The purpose of the present invention is to provide a three-dimensional network porous upright nano noble metal sheet constructed on a boron-doped diamond film substrate, thereby obtaining an advanced electrode with great application prospects. [0004] The present invention uses boron-doped diamond film as the base material. This material has the advantages of wide potential window, low background ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D7/00C25D3/22C25D11/02
Inventor 赵国华童希立刘梅川
Owner TONGJI UNIV
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