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Method for preparing textured ZnO membrane with pyramid-like structure

A pyramid structure, suede technology, applied in the field of solar cells, can solve the problems of expensive raw materials, waste of film materials, and high risk of suede ZnO films

Inactive Publication Date: 2009-10-21
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of high risk and waste of film materials in the preparation of the textured ZnO film in the existing method, or the required raw materials are expensive and require toxic gas, and provide a method for preparing a textured ZnO film with a pyramid-like structure

Method used

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  • Method for preparing textured ZnO membrane with pyramid-like structure
  • Method for preparing textured ZnO membrane with pyramid-like structure
  • Method for preparing textured ZnO membrane with pyramid-like structure

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Experimental program
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Embodiment 1

[0017] Zinc acetate is used as Zn source, and indium nitrate is used as doped indium source. Water and absolute ethanol were mixed at a ratio of 1:3 as a solvent, and zinc acetate and indium nitrate were respectively configured into 0.1 mol / L solutions. Zinc acetate and indium nitrate solution are mixed according to Zn:In=1:0.03 (atomic percentage), and then glacial acetic acid is added thereto according to the volume ratio of zinc acetate solution to glacial acetic acid at 1:0.1. Ordinary glass (Na 2 O: CaO: SiO 2 = 1:1:6) as the substrate. The growth temperature was 480°C. High purity N 2 (purity is 99.999%) as carrier gas, grows 60min, the thickness that obtains sample is 280nm, obtains the surface appearance that has certain surface roughness ZnO thin film such as figure 1 ;

Embodiment 2

[0019] Zinc acetate is used as Zn source, and indium nitrate is used as doped indium source. Water and absolute ethanol were mixed at a ratio of 1:3 as a solvent, and zinc acetate and indium nitrate were respectively prepared into 0.2 mol / L solutions. Zinc acetate and indium nitrate solution are mixed according to Zn:In=1:0.03 (atomic percentage), and then glacial acetic acid is added thereto according to the volume ratio of zinc acetate solution to glacial acetic acid at 1:0.1. Ordinary glass (Na2O:CaO:SiO2=1:1:6) was used as the substrate. The growth temperature was 480°C. Air is used as the carrier gas, grown for 60min, the thickness of the obtained sample is 549nm, and the morphology of the obtained ZnO thin film is as follows figure 2 , it is obvious that ZnO thin films with pyramid-like morphology were synthesized.

Embodiment 3

[0021] Zinc acetate was used as Zn source, and aluminum nitrate was used as doped aluminum source. Using water as a solvent, zinc acetate and aluminum nitrate were prepared into 0.3mol / L and 0.05mol / l solutions respectively. The zinc acetate and aluminum nitrate solutions were mixed according to Zn:In=1:0.05 (atomic percentage). Ordinary glass (Na2O:CaO:SiO2=1:1:6) was used as the substrate. The growth temperature was 360°C. High-purity N2 (purity is 99.999%) is used as carrier gas, grows 40min, the thickness that obtains sample is 50nm, obtains the surface morphology of ZnO thin film with certain surface roughness such as image 3 ;

[0022] In summary, the present invention controls the reaction deposition parameters, adopts low-cost ultrasonic spray pyrolysis technology, and uses cheap and non-toxic chemicals to directly synthesize a transparent conductive film with a pyramid-like texture for solar cells.

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Abstract

The invention relates to a method for preparing a textured ZnO membrane with a pyramid-like structure. The method comprises the following steps: taking zinc acetate as a Zn source, indium nitrate or indium acetate as a doped indium source, aluminum nitrate or aluminum acetate as a doped aluminum source, gallium nitrate or gallium acetate as a doped gallium source and anhydrous ethanol and / or water as a solvent; preparing a zinc source solution and a doped source solution with certain concentration respectively, and mixing the zinc source solution and the doped source solution; adding glacial acetic acid into the mixture; using high-purity N2 or air as carrier gas; and conveying the reaction liquid into a membrane precipitation chamber for growth, wherein a substrate can be glass or stainless steel and the like, and the growth temperature is between 300 and 550 DEG C. The method adopts cheap and nontoxic chemical products and utilizes a low-cost ultrasonic atomizer to directly obtain the ZnO membrane with a textured structure and light scattering characteristic under the condition of not requiring the doping of B2H6, so that the method cannot pollute the environment, belongs to 'environment-friendly' technology, and can be suitable for the preparation of the large-area (for example, S is equal to 1.2X0.6 meter) ZnO transparent conductive film.

Description

【Technical field】: [0001] The invention belongs to the technical field of solar cells. In particular, the invention relates to a preparation method of a transparent conductive film suitable for thin film solar cell applications. 【Background technique】: [0002] In recent years, due to the SnO 2 Thin films have good electrical and optical properties and are widely used as transparent conductive films for solar cells. However, the optical properties of this material deteriorate due to the reduction of Sn in a hydrogen plasma atmosphere, which limits its application as a transparent conductive film in thin-film solar cells, especially microcrystalline silicon thin-film solar cells, while ZnO thin-film Not only can it have high stability in the hydrogen plasma environment, but also can achieve thin film growth with excellent photoelectric properties (low resistivity, textured structure, high transmittance), thus becoming a very competitive transparent material in thin film sol...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0224C23C18/02
CPCY02P70/50
Inventor 张晓丹赵颖焦宝臣魏长春耿新华熊绍珍
Owner NANKAI UNIV
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