Method for controlling film orientation in vacuum evaporation film making process

A technology of vacuum evaporation and film orientation, which is applied in vacuum evaporation plating, ion implantation plating, metal material coating process and other directions, and can solve the problems of difficult preparation of single crystal substrates.

Inactive Publication Date: 2009-10-14
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Usually changing the orientation of the film can only be adjusted by changing the preferred orientation of the substrate, however, it is difficult to prepare a single crystal substrate with any orientation

Method used

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  • Method for controlling film orientation in vacuum evaporation film making process
  • Method for controlling film orientation in vacuum evaporation film making process
  • Method for controlling film orientation in vacuum evaporation film making process

Examples

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Embodiment 1

[0016] In this embodiment, a conventional and commonly used vacuum evaporation thin film deposition device is used. see figure 2 , the device includes: a workbench for placing substrates, a vacuum evaporation deposition chamber 3, a metal evaporation source 4, a heating electrode 5, and a vacuum pump interface 6; in addition, a strong magnetic field generator is arranged outside the vacuum evaporation deposition chamber 3 1.

[0017] In the present embodiment, the substrate 2 adopts a glass substrate, and the evaporated metal source 4 adopts metal zinc, and its crystal has a hexagonal crystal structure, showing c-axis and a-axis (see figure 1 ); the heating electrode 5 adopts tungsten as the resistance heating material; the magnetic field intensity generated by the strong magnetic field generator 1 positioned at the outside of the evaporation deposition chamber 3 is 4T (Tesla); at first, the vacuum evaporation deposition chamber is pumped through the vacuum pump interface 6 ...

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Abstract

The invention relates to a method for controlling film orientation in a vacuum evaporation film making process, belonging to the technical field of vacuum evaporation deposited film process. The method is characterized in that, based on a traditional vacuum evaporation deposit device which is commonly used, an intense magnetic field generation device is additionally arranged outside the vacuum evaporation deposit device, and the strength of the magnetic field of the vacuum evaporation deposit device is required to be larger than 4T (Tesla), and different orientation magnetic energy differences of the magnetic field on metal films cause preferential growth of crystal orientation, thereby achieving the aim of controlling the film orientation through adjusting the strength of the magnetic field.

Description

technical field [0001] The invention relates to a method for controlling the orientation of a thin film in the vacuum evaporation film forming process, and belongs to the technical field of vacuum evaporation deposition thin film technology. Background technique [0002] In a vacuum environment, heating methods such as resistance, electron beam, laser, electric arc, and radio frequency are used to vaporize raw materials or form plasma, and the evaporated gas condenses on a supercooled substrate to form a thin film. This deposition process is called vacuum evaporation technology. The preparation of thin films by vacuum evaporation technology does not involve chemical reactions and belongs to physical vapor deposition. The physical and chemical properties of the film are closely related to the orientation of the film. Generally, the physical properties of the film can be optimized by controlling the orientation of the film. The orientation of the film is related to the orient...

Claims

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Application Information

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IPC IPC(8): C23C14/24C23C14/54
Inventor 任忠鸣任树洋任维丽操光辉邓康钟云波雷作胜
Owner SHANGHAI UNIV
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