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P type transversal bilateral diffusion metal oxide semiconductor tube capable of reducing hot carrier effect

A technology of lateral double diffusion and hot carriers, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as incompatibility, and achieve the effects of reducing temperature, charging, and damage

Inactive Publication Date: 2009-08-19
SOUTHEAST UNIV
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

For example, doping F and Cl in the gate oxide layer or replacing silicon dioxide with silicon nitride, etc., but this method also has the disadvantage of being incompatible with the current common process.

Method used

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  • P type transversal bilateral diffusion metal oxide semiconductor tube capable of reducing hot carrier effect
  • P type transversal bilateral diffusion metal oxide semiconductor tube capable of reducing hot carrier effect
  • P type transversal bilateral diffusion metal oxide semiconductor tube capable of reducing hot carrier effect

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Embodiment Construction

[0018] refer to figure 2 , a P-type lateral double-diffused metal oxide semiconductor tube for reducing hot carrier effects, comprising: a P-type semiconductor substrate 9, an N-type well region 10 is arranged on the P-type semiconductor substrate 9, and an N-type well region is arranged on the N-type well A P-type well region 8 and a P-type doped semiconductor region 11 are arranged on the region 10, a P-type source region 6 and an N-type contact region 7 are arranged on the P-type well region 8, and a P-type doped semiconductor region 11 is arranged There is a P-type drain region 12, and a gate oxide layer 3 is provided on the surface of the P-type well region 8, and the gate oxide layer 3 extends from the P-type well region 8 to the N-type well region 10 and the P-type doped semiconductor region 11. The P-type source region 6 on the surface of the well region 8, the N-type contact region 7 and the region other than the gate oxide layer 3 and the region other than the P-typ...

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Abstract

The invention discloses a P-type lateral double-diffused metal-oxide transistor which is capable of reducing hot-carrier effect and comprises a P-type semiconductor substrate; an N-type well region is arranged on the P-type semiconductor substrate; a P-type well region and a P-type doped semiconductor area are arranged on the N-type well region; a P-type source area and an N-type contact area are arranged on the P-type well region; a P-type drain area is arranged on the P-type doped semiconductor area; and a field oxide layer, a metal layer, a gate oxide layer, a polysilicon grid and an oxide layer are arranged on the upper surface of the device. The P-type lateral double-diffused metal-oxide transistor is characterized in that: a lightly-doped shallow P-type area is arranged in the N-type well region and positioned between the P-type well region and the P-type doped semiconductor area and covers a corner which is formed by the gate oxide layer and the P-type doped semiconductor area.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, and more specifically relates to a P-type lateral double-diffused metal oxide semiconductor (LDMOS) for reducing hot carrier effects. Background technique [0002] In power integrated circuits, high-voltage drive tubes usually work under high-voltage conditions, and the lateral electric field and current density in the device channel are much larger than other devices. Therefore, the hot carrier effect is an inevitable problem in the design of high-voltage drive tubes. The main factor affecting the reliability of the device, especially for the lateral double-diffused metal-oxide-semiconductor tube where the current always flows at the interface of silicon and silicon dioxide, the failure problem caused by the hot carrier effect is even more serious. [0003] At present, most of the solutions to the hot carrier effect of high-voltage lateral double-diffused metal-oxide-semiconductor tube...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/36
Inventor 钱钦松张丽孙伟锋徐申陆生礼时龙兴
Owner SOUTHEAST UNIV
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