Method to improve mask critical dimension uniformity (cdu)

Abstract

A method and system for fabricating a substrate is disclosed. First, a plurality of process chambers are provided, at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate and at least one of the plurality of process chambers containing a plasma filtering plate library. A plasma filtering plate is selected and removed from the plasma filtering plate library. Then, the plasma filtering plate is inserted into at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate. Subsequently, an etching process is performed in the substrate.

Description

technical field [0001] The present invention relates to the field of substrate manufacturing process, in particular to a method and system for etching a substrate to improve critical dimension uniformity (CDU). Background technique [0002] In semiconductor manufacturing technology, a mask (also referred to as a photomask, photomask or reticle) is used in a lithography system to expose a pattern on a substrate. A pattern may include many small or dense features defined by a critical dimension (CD). Critical dimensions define such as gate width, smaller line width or smaller line spacing allowed by the device process. As the critical dimensions of masks or wafers get smaller (eg, from 45nm to 32nm), it is important that the dimensional and geometric variations of the pattern features also get smaller. The above-mentioned differences in pattern features will cause errors in critical dimension uniformity (CDU). [0003] Variations in size and geometry of pattern features are...

AI Technical Summary

Problems solved by technology

However, this solution presents several disadvantages: (1) the ion-radical barrier does not change automatically or easily; (2) the support structure (multiple legs) for the ion-radical barrier can lead to generation of particles, especially those caused by vibration; and (3) the inability of ion-radical barriers to compensate for CDU errors for all masks, especially the overall loading effects of processes other than etching (e.g., bake, develop, and exposure process)

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