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Silicon chip cleaning liquid and cleaning method thereof

A silicon wafer cleaning and cleaning solution technology, applied in the field of cleaning solution, can solve the problems of poor adhesion of metal layers, reduce the density of gate oxide layer materials, cannot effectively remove organic contamination, etc., and achieve the effect of improving the effect.

Inactive Publication Date: 2010-12-22
深圳深爱半导体股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there will be a little organic contamination on the silicon wafer after grinding, while the existing H 2 O: HF cleaning solution cannot effectively remove organic contamination, which not only leads to poor adhesion of the metal layer after metallization, but also reduces the density of the gate oxide material

Method used

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  • Silicon chip cleaning liquid and cleaning method thereof
  • Silicon chip cleaning liquid and cleaning method thereof
  • Silicon chip cleaning liquid and cleaning method thereof

Examples

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Effect test

Embodiment 1

[0023] After the silicon wafer is ground, rinse the silicon wafer with deionized water (pure water), and then rinse the silicon wafer with a mixture of ethanol and hydrofluoric acid with a volume ratio of 35:1 at 21°C for 30 seconds, wherein the The concentration of ethanol is 100%, the concentration of hydrofluoric acid is 48%, and then the silicon wafer is air-dried, and then the backside metallization process is further performed.

Embodiment 2

[0025] After the silicon wafer is ground, rinse the silicon wafer with deionized water (pure water), and then rinse the silicon wafer with a mixture of ethanol and hydrofluoric acid with a volume ratio of 40:1 at 22°C for 40 seconds, wherein the The concentration of ethanol is 49%, the concentration of hydrofluoric acid is 49%, and then the silicon wafer is air-dried, and then the backside metallization process is further performed.

Embodiment 3

[0027] After the silicon wafer is ground, rinse the silicon wafer with deionized water (pure water), and then rinse the silicon wafer with a mixture of ethanol and hydrofluoric acid with a volume ratio of 45:1 at 23°C for 60 seconds, wherein the The concentration of ethanol is 18%, the concentration of hydrofluoric acid is 50%, and then the silicon wafer is air-dried, and then the backside metallization process is further performed.

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Abstract

The invention discloses a silicon chip cleaning agent, which is prepared by mainly mixing ethanol and hydrofluoric acid, wherein the volume ratio of the ethanol to the hydrofluoric acid is 35-45:1; the mass percentage concentration of the ethanol is 18 to 100 percent; and the hydrofluoric acid is prepared from the fluorine hydride and deionized water and is at a mass percentage concentration of 48 to 50 percent. The invention also discloses a method for cleaning a silicon chip, which comprises the following steps: washing the silicon chip with deionized water; and washing the silicon chip with the silicon chip cleaning agent. The silicon cleaning agent and the method for cleaning the silicon chip can effectively remove organic stains and improve the back cleaning effect of a hydrofluoric acid cleaning agent.

Description

【Technical field】 [0001] The invention relates to a cleaning liquid in a semiconductor manufacturing process, in particular to a silicon chip cleaning liquid and a cleaning method thereof. 【Background technique】 [0002] At present, in the semiconductor manufacturing process, deionized water: hydrofluoric acid (H 2 (O: HF) cleaning solution to clean the silicon wafer to remove the natural oxide layer on the surface of the silicon wafer, because there is no natural oxide layer on the surface of the silicon wafer, which is the key to growing high-purity epitaxial films and MOS circuit gate ultra-thin oxides. After soaking in hydrofluoric acid, the surface of the silicon wafer is completely terminated by hydrogen atoms, which has high stability in the air and avoids re-oxidation. However, there will be a little organic contamination on the silicon wafer after grinding, while the existing H 2 O: HF cleaning solution cannot effectively remove organic contamination, which not on...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311H01L21/306C11D7/26C11D7/08
Inventor 李杰
Owner 深圳深爱半导体股份有限公司
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