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Method for in situ modification by isoelectric point layered composite metal hydroxides

A layered composite, hydroxide technology, applied in the preparation of oxide/hydroxide, alumina/aluminum hydroxide, etc., can solve the problems of increased production cost, large production water consumption, consumption of washing water, etc. The effect of washing water consumption, simplifying the washing process, and avoiding ion agglomeration

Inactive Publication Date: 2009-08-12
BEIJING UNIV OF CHEM TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the modification is completed after washing, a large amount of washing water is still required, especially for products that are difficult to wash, the production water consumption is huge, which greatly increases the production cost

Method used

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  • Method for in situ modification by isoelectric point layered composite metal hydroxides
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  • Method for in situ modification by isoelectric point layered composite metal hydroxides

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 102.5g Mg(NO 3 )·6H 2 O and 75.0gAl(NO 3 ) 3 9H 2 O was dissolved in deionized water to form a 500ml mixed salt solution, and 38.4g NaOH and 42.3g NaOH 2 CO 3 Make 500ml alkali solution with water, add the two solutions into the total back-mixed liquid membrane reactor at the same time, place the obtained slurry in a 2L flask and heat to reflux under stirring conditions, and react for 6 hours to obtain Mg 4 al 2 (OH) 12 CO 3 4H 2 O slurry. The slurry was cooled to room temperature, and the pH value of the slurry was determined to be 10.6. The slurry was divided into 4 parts, each containing about 5g of the product, and the Mg was measured with a DXD2II type TV microelectrophoresis instrument. 4 al 2 (OH) 12 CO 3 4H 2 The isoelectric point of O is 9.9. 0.2% dilute hydrochloric acid solution was added dropwise to the above four slurries under stirring condition, so that the pH values ​​of the four slurries were 10.5, 10.0, 9.5 and 9 respectively. The tempe...

Embodiment 2

[0036] 129.4g ZnSO 4 ·7H 2 O and 50.0gAl 2 (SO 4 ) 3 18H 2 O was dissolved in deionized water to make a 300ml mixed salt solution, 38.4g NaOH was dissolved in 300ml water to make an alkali solution, and the two solutions were added to the full back-mixed liquid membrane reactor at the same time, and the obtained slurry was placed in a 2L flask under stirring conditions Heated to reflux, reacted for 6h to obtain Zn 6 al 2 (OH) 12 SO 4 4H 2 O slurry, cooled to room temperature, is divided into 4 parts, each part contains about 5g of product, and the pH value of the measured slurry is 10.5. Determination of Zn by DXD2II TV Microelectrophoresis Apparatus 6 al 2 (OH) 12 SO 4 4H 2 The isoelectric point of O is 9.7. A dilute sulfuric acid solution with a concentration of 0.2% was prepared and added dropwise to the above slurry under stirring conditions to adjust the pH of the system to 10.5, 10.0, 9.5 and 9 respectively. The temperature was raised to 80°C, and 0.25 g ...

Embodiment 3

[0041] 76.9g Mg(NO 3 ) 2 ·6H 2 O and 56.3g Al(NO 3 ) 3 9H 2 O was dissolved in deionized water to make a 500ml mixed salt solution, 36.0g NaOH was dissolved in 300ml water to make an alkaline solution, and the two solutions were simultaneously added to the full back-mixed liquid membrane reactor, and the obtained slurry was placed in a 2L flask under stirring conditions Heated to reflux, reacted for 6h to obtain Mg 4 al 2 (OH) 12 NO 3 4H 2 O slurry, cooled to room temperature, is divided into 4 parts, each part contains about 5g of product, and the pH value of the measured slurry is 10.2. Determination of Mg with DXD2II TV Microelectrophoresis Apparatus 4 al 2 (OH) 12 NO 3 4H 2 The isoelectric point of O is 9.4. A dilute sulfuric acid solution with a concentration of 0.1% was prepared and added dropwise to the above slurry under stirring conditions to adjust the pH of the system to 10.5, 10.0, 9.5 and 9 respectively. Raise the temperature to 80°C, add 0.2g of l...

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Abstract

The invention provides a technology for carrying out surface in situ modification on clad composite metal hydroxid by using isoelectric points. After the clad composite metal hydroxid is prepared for reaction, the system PH value is adjusted to be lower than the isoelectric points of particles before washing, and then modifying agent is directly added for in situ modification so as to lead modifying agent molecules and surface groups of inorganic particles to have physico chemical adsorption and cover on the surface, thus achieving good modification effect. After modification, products can quickly float on the water, so that the process of separation and filtration can be simplified. The method not only effectively avoids ion glomeration, but also greatly simplifies the washing process, thus reducing water consumption when in washing.

Description

Technical field: [0001] The invention relates to a method for in-situ surface organic modification of layered composite metal hydroxide by utilizing isoelectric point. Background technique: [0002] During the use of general inorganic powders, especially when they are added to organic systems such as polymer materials as functional auxiliary materials, it is usually necessary to carry out surface organic modification to increase their compatibility with the organic matrix, so that It achieves a good dispersion effect and exerts a good effect. [0003] At present, the surface modification of inorganic powders at home and abroad generally adopts dry surface treatment. Usually, the inorganic powders are added to a high-speed mixer, and the organic modifier is added under high-speed stirring, heated and fully stirred. This method has problems such as complex production process, uneven surface treatment and easy agglomeration. The document [The mechanism of silane coupling agen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B13/14C01F7/02
Inventor 林彦军李殿卿段雪陈汉周贾雪飞
Owner BEIJING UNIV OF CHEM TECH
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