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Multi-energy level silicon based thin-film solar cell

A technology of solar cells and silicon-based thin films, applied in circuits, electrical components, photovoltaic power generation, etc.

Inactive Publication Date: 2009-08-05
CONTREL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there has been no silicon-based thin-film solar cell with multiple energy levels in a single P-i-N structure in the past.

Method used

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  • Multi-energy level silicon based thin-film solar cell
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Embodiment Construction

[0023] Although the present invention can be embodied in different forms, those shown in the drawings and described below are preferred embodiments of the present invention, and please understand that what is disclosed herein is considered an example of the present invention and is not intended to It is intended that the invention be limited to the drawings and / or the specific embodiments described.

[0024] Please refer to figure 1 , which shows a side cross-sectional view of a silicon-based thin-film solar cell 100 with multiple energy levels, which is the first embodiment of the present invention. The multi-level silicon-based thin film solar cell 100 includes a substrate 110; a transparent conductive film 120; a P-type semiconductor layer 130; an intrinsic type (i-type) semiconductor layer 140; an N-type semiconductor layer 150 and an electrode 160 . The substrate 110 is used for carrying thin films; the transparent conductive film 120 is used to take out electric energy...

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Abstract

The invention discloses a multi-energy level silicon-based thin film solar cell, comprising a substrate, a transparent conductive film, a P-typed semiconductor layer, an intrinsic semiconductor layer, an N-typed semiconductor layer, and an electrode; one side of the substrate is used for lighting; the transparent conductive film is formed on the substrate and used for taking out power and upgrading the photoelectric conversion efficiency; the P-typed semiconductor layer is formed on the transparent conductive film and used for generating a cavity; the intrinsic semiconductor layer is formed above the P-typed semiconductor layer and used for improving the electrical characteristics of the solar cell; the N-typed semiconductor layer is formed above the intrinsic semiconductor layer and used for generating an electron; and the electrode is formed above the N-typed semiconductor layer and used for taking out power and upgrading the photoelectric conversion efficiency. The multi-energy level silicon-based thin film solar cell uses the thin films of different materials so as to improve the light wavelength absorption range thereof and enhance the photovoltaic conversion efficiency of the solar cell.

Description

technical field [0001] The invention relates to a silicon-based thin-film solar cell, in particular to a P-i-N silicon-based thin-film solar cell with different energy levels. Different thin-film materials are used to increase the absorption range of light wavelength and increase the photoelectric conversion efficiency of the solar cell. Background technique [0002] At present, due to the international energy shortage, countries all over the world have been continuously researching and developing various alternative energy sources, among which solar cells that generate electricity from solar energy have attracted the most attention. Solar cells are easy to use, inexhaustible, inexhaustible, no waste, no pollution, no rotating parts, no noise, can block radiant heat, long service life, size can be changed at will, and interact with buildings Combined with the advantages of popularity and popularization, it uses solar cells as energy sources. [0003] In the 1970s, silicon s...

Claims

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Application Information

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IPC IPC(8): H01L31/075H01L31/065H01L31/078
CPCY02E10/50
Inventor 简永杰杨茹媛张育绮田伟辰
Owner CONTREL TECH CO LTD
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