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Method for preparing pile face zinc oxide transparent conductive film coating glass by plasma bombardment

A plasma, transparent and conductive technology, applied in the direction of ion implantation plating, sputtering plating, vacuum evaporation plating, etc., can solve the problems of limited use, air pollution, high price, etc., to increase absorption and improve conversion rate , the effect of increasing the light path

Inactive Publication Date: 2009-08-05
JIANGSU XIUQIANG GLASSWORK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, FTO film is toxic, expensive, and costly, and the waste gas formed in the industrial production process will cause air pollution; especially when depositing silicon film, Sn +4 It is easily reduced by hydrogen plasma, which reduces the performance of silicon thin film solar photovoltaic cells and limits its use in silicon thin film solar cells

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1: High-purity argon is used as the working gas for plasma and sputter coating.

[0025] 1) First, the glass substrate to be coated is cleaned and dried;

[0026] 2) Put the dry glass substrate on the back and the vacuum is ≤2.5X10 -3 Pa's vacuum chamber. The vacuum chamber has a plasma generation source and a sputtering target (aluminum-doped ZnO target with a relative density > 95%) is installed.

[0027] 3) In a high-purity argon environment of 0.03Pa, the argon gas was ionized with a voltage of 2000V; under the conditions of a focusing voltage of 1500V and an argon ion beam current of 100μA, the glass surface was bombarded with plasma for 3 minutes.

[0028] 4) In a high-purity argon environment of 0.35Pa, SiO is plated 2 The transition layer is isolated with a film thickness of 30nm.

[0029] 5) Under the high-purity argon atmosphere of 0.35Pa, in SiO 2 The ZnO thin film is sputtered on the isolation transition layer.

[0030] 6) In a high-purity a...

Embodiment 2

[0032] Embodiment 2: High-purity argon is used as the working gas for plasma and sputter coating.

[0033] 1) First, the glass substrate to be coated is cleaned and dried;

[0034] 2) Place the dry glass substrate on the backside with a vacuum of ≤2.5 X 10 -3 Pa's vacuum chamber. The vacuum chamber has a plasma generation source and a sputtering target (aluminum-doped ZnO target with a relative density > 95%) is installed.

[0035] 3) In a high-purity argon environment of 0.08Pa, the argon gas was ionized with a voltage of 2400V; under the conditions of a focusing voltage of 1800V and an argon ion beam current of 130μA, the glass surface was bombarded with plasma for 3 minutes.

[0036] 4) In a high-purity argon environment of 0.35Pa, SiO is plated 2 The transition layer is isolated with a film thickness of 40nm.

[0037] 5) In the high-purity argon environment of 0.35Pa, the SiO 2 The ZnO thin film is sputtered on the isolation transition layer.

[0038] 6) In a high-pu...

Embodiment 3

[0040] Embodiment 3: High-purity argon is used as the working gas for plasma and sputter coating.

[0041] 1) First, the glass substrate to be coated is cleaned and dried;

[0042] 2) Place the dry glass substrate on the backside with a vacuum of ≤2.5 X 10 -3 Pa's vacuum chamber. The vacuum chamber has a plasma generation source and a sputtering target (aluminum-doped ZnO target with a relative density > 95%) is installed.

[0043] 3) In a high-purity argon environment of 0.1Pa, argon is ionized with a voltage of 3000V; under the conditions of a focusing voltage of 2800V and an argon ion beam current of 330μA, the glass surface is bombarded with plasma for 3 minutes.

[0044] 4) In a high-purity argon environment of 0.35Pa, SiO is plated 2 Isolate the transition layer with a film thickness of 50nm.

[0045] 5) In the high-purity argon environment of 0.35Pa, the SiO 2 The ZnO thin film is sputtered on the isolation transition layer.

[0046]6) In a high-purity argon envir...

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Abstract

The invention relates to a method for preparing matte ZnO transparent conductive coating glass by plasma bombarding, which belongs to the field of glass processing and thin-film solar-energy photo-voltaic cells, wherein ZnO matte conductive glass is critical material for achieving the building integrated photovoltaic and an important premise for improving the conversion rate of a thin-film solar-energy photo-voltaic cell. The method is characterized in that firstly, a plasma is firstly used for implementing the pretreatment bombardment to a glass substrate so that the matte is formed on the surface of the glass; secondly, an SiO2 isolating transition layer is plated by magnetic control sputtering on the surface of the matte glass, and then, a ZnO film is plated by sputtering on the SiO2 isolating transition layer; and thirdly, the plasma is finally used for bombarding the surface of the ZnO film so as to form the ZnO matte transparent conductive glass. The ZnO matte transparent conductive glass prepared by the method has matte degree of 4-9 percent, visible light total transmittance ratio of more than 75 percent and square resistance of 8-20 Ohm / W.

Description

technical field [0001] The invention relates to a ZnO textured transparent conductive glass and a preparation method thereof, which is used for thin-film solar photovoltaic cells and belongs to the technical field of glass processing, thin-film solar photovoltaic cells and photovoltaic building integrated materials manufacturing. Background technique [0002] Transparent conductive coated glass is usually used as the front electrode of thin-film solar cells, liquid crystal displays, and plasma displays. The glass-based oxide transparent conductive film with textured structure can reflect, refract and scatter the transmitted visible light, and convert the light incident into the film Scatter to all angles, thereby increasing the optical path of light in the absorbing layer of thin-film solar cells, and increasing the light absorption of the film; therefore, the glass-based oxide transparent conductive film with textured structure is an important factor for improving the conver...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/02C23C14/08C23C14/10
Inventor 赵青南董玉红卢秀强
Owner JIANGSU XIUQIANG GLASSWORK CO LTD
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