Solid-state imaging device and method for manufacturing the same

Abstract

The present invention discloses a solid-state imaging device and producing method thereof, wherein the solid-state imaging device includes: a light-receiving pixel part configured to be formed on a semiconductor substrate; a black-level reference pixel part configured to be formed on the semiconductor substrate; and a multilayer interconnect part configured to be provided over the semiconductor substrate. The multilayer interconnect part includes an insulating layer formed over the semiconductor substrate and metal interconnect layers formed as a plurality of layers in the insulating layer. The multilayer interconnect part has a first light-blocking film formed above an area between first metal interconnects of a first metal interconnect layer as one of the metal interconnect layers above the black-level reference pixel part, and a second light-blocking film that is connected to the first light-blocking film and is formed of a second metal interconnect layer over the first metal interconnect layer. The solid-state imaging device can decrease thickness of the interconnect layer while keeping high lightproof performance, and shorten concentration distance.

Description

[0001] Cross References to Related Applications [0002] The present invention contains subject matter related to Japanese Patent Application JP2008-013493 filed with the Japan Patent Office on January 24, 2008, and Japanese Patent Application JP2008-190604 filed with the Japan Patent Office on July 24, 2008, the entire contents of which are incorporated herein Incorporated here by reference. technical field [0003] The present invention relates to a solid-state imaging device and a manufacturing method thereof. Background technique [0004] In a CMOS solid-state imaging device, which is one of image sensors, light is usually shielded by using metal wiring or filters in areas that need to be protected from light, such as black level reference pixel portions and peripheral circuit areas. [0005] Specifically, if a light-shielding film is formed when metal wiring is formed, since CMOS logic processing is actually applied, the light-shielding film for a region that needs to ...

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Problems solved by technology

[0014] Since the light transmittance of the metal film decreases exponentially with the increase of its thickness, the reduction of the thickness of the wiring layer will result in insufficient ability of the light-shielding film to prevent light from entering

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