Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Light emitting device

A light-emitting device and light-emitting surface technology, which is applied in the fields of organic electroluminescent light-emitting devices and white light-emitting devices, can solve problems such as limited use of surfaces, and achieve the effects of improving luminous brightness, reducing adverse effects, and improving viewing angle dependence

Inactive Publication Date: 2009-06-10
IDEMITSU KOSAN CO LTD
View PDF20 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its use is limited (view angle dependence)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light emitting device
  • Light emitting device
  • Light emitting device

Examples

Experimental program
Comparison scheme
Effect test

manufacture example 1

[0304] Modulation of Semiconductor Nanocrystalline Fluorescent Dielectric Material 1

[0305] 0.5 g of cadmium acetate dihydrate and 1.6 g of tetradecylphosphonic acid (TDPA) were added to 5 ml of trioctylphosphine (TOP). The solution was heated to 230°C under nitrogen atmosphere and stirred for 1 hour. After cooling to 60° C., 2 ml of a TOP solution containing 0.2 g of selenium was added as a raw material solution.

[0306] 10 g of trioctylphosphine oxide (TOPO) was placed in a three-necked flask, and vacuum-dried at 195° C. for 1 hour. Use nitrogen to return to atmospheric pressure, directly heat to 270° C. under nitrogen atmosphere, and add 1.5 ml of the above raw material solution while stirring the system. The reaction (nuclear growth reaction) proceeds while constantly checking the fluorescence spectrum of the reaction solution. When the nanocrystal has a fluorescence peak at 615 nm, the reaction solution is cooled to 60° C. to stop the reaction.

[0307] 20 ml of bu...

manufacture example 2

[0312] Modulation of Semiconductor Nanocrystalline Fluorescent Dielectric Material 2

[0313] To synthesize indium phosphide (InP) semiconductor nanocrystals, fresh In(OH) 3 0.02g (0.1mmol) was dissolved in HPA0.5g (3mmol) and TOPO3.5g. Next, the solution was cooled to 120-130° C., and argon gas was flowed into the reaction system. After depressurizing for 20-30 minutes, argon gas was further flowed in for 10-15 minutes. In order to remove all the water and oxygen absorbed by the reaction system, this process of argon gas flow and depressurization was repeated 3 times. After heating the reaction mixture to 300°C, inject the solution containing P(TMS) 3 2 g of a stock solution of 0.0277 g (0.1 mmol), TOP 1.8 g and toluene 0.2 g. To grow the nanocrystals, the reaction mixture was cooled to 250°C. After the nanocrystal reaches the desired particle size, the sheathed resistance heater is quickly taken out, and the reaction solvent is cooled to stop the reaction. After the tem...

manufacture example 3

[0316] Preparation of fluorescent medium material 3 using organic phosphor (perylene dye)

[0317] As a perylene-based dye, 0.3 wt% (relative solid content) of the compound represented by the following formula (Ia), 0.6 wt% (relative solid content) of the compound represented by the following formula (IIa) and 0.6 wt% (relative solid content) of the compound represented by the following formula (IIIa) 0.6 wt% of the compound (relative to solid content) was dissolved in the base resin in the same manner as in Production Example 1 to prepare a fluorescent medium material 3 using a perylene-based dye.

[0318] [chemical 9]

[0319]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Film thicknessaaaaaaaaaa
Login to View More

Abstract

A light emitting apparatus (1) including: a supporting substrate (10), a fluorescence medium (20) and an emitting device (30) for covering the fluorescence device (20); the emitting device (30) having two or more emitting surfaces which are not parallel to each other; wherein the light emitting apparatus (1) emits light obtained by mixing light emitted by the emitting device (30) and light emitted by the fluorescence medium (20).

Description

technical field [0001] The present invention relates to a light-emitting device used in general lighting, backlights for liquid crystals, etc., and particularly relates to a white light-emitting device having a large area in combination with a fluorescent medium. In addition, the present invention relates to a light-emitting device used in lighting fields such as general lighting and backlights for liquid crystals, particularly an organic electroluminescence (EL) light-emitting device. Background technique [0002] Light-emitting devices used for general lighting or backlights (for liquid crystals) are expected to be thin, simple in structure, large in area, uniform in surface light emission, high in efficiency, and high in durability. [0003] The organic electroluminescence (EL) element can obtain a thin and uniform surface-emitting light-emitting device. In particular, it is known in Patent Document 1 and the like that white light emission can be easily obtained by mixin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H05B33/12H01L51/50
Inventor 荣田畅熊均细川地潮福田雅彦
Owner IDEMITSU KOSAN CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com