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Copper zincium tin sulfur compound semiconductor thin-film solar cell and manufacturing method

A solar cell, copper-zinc-tin-sulfur technology, applied in the direction of semiconductor devices, circuits, photovoltaic power generation, etc., can solve the problems that limit the development of CIGS thin-film solar cells and the content is poor, and achieve the effect of environmental friendliness and abundant resources

Inactive Publication Date: 2009-06-10
上海太阳能电池研究与发展中心
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Problems solved by technology

[0004] However, the biggest disadvantage of CIGS is that In, Ga, and Se are all rare elements, and their content in the earth is relatively poor, and Se is a toxic element.
These will ultimately limit the development of CIGS thin film solar cells

Method used

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  • Copper zincium tin sulfur compound semiconductor thin-film solar cell and manufacturing method

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Embodiment Construction

[0023] The specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing and embodiment:

[0024] See figure 1 , the thin-film solar cell of the present invention comprises: a glass substrate 1, on which a metal back electrode layer 2 is sequentially deposited, and a P-type Cu 2 ZnSnS 4 Absorbing layer 3, n-type CdS buffer layer 4, transparent conductive oxide film window layer 5.

[0025] The preparation process of the present embodiment is as follows:

[0026] 1. Deposit a metal gold back electrode layer 2 on the surface of the glass substrate 1 by magnetron sputtering. Then deposit P-type Cu on the back electrode layer 2 ZnSnS 4 The absorption layer 3 has a thickness of 2000 nanometers.

[0027] 2. Then for P-type Cu 2 ZnSnS 4 The absorption layer 3 is post-treated, and the specific steps of the post-treatment are as follows:

[0028] 2A.Cu 2 ZnSnS 4 The post-sulfurization treatment of the absorber layer 3 is c...

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Abstract

The invention discloses a Cu-Zn-Sn-S compound semiconductor-film solar battery and a preparation method. The battery comprises a glass substrate, wherein a metal back electrode layer, a P-type Cu2ZnSnS4 (CZTS) absorption layer, an n-type CdS buffer layer and a transparent conducting oxide film window layer are sequentially deposited on the glass substrate. The method comprises special aftertreatment for the P-type Cu2ZnSnS4 absorption layer. The preparation method has the advantage of substituting CZTS for CIGS as the novel material of the absorption layer of the film solar battery. As the abundance of Zn and Sn in the CZTS in earth crust is 75 ppm and 2.2 ppm respectively, the solar battery has the advantages of rich resources, no toxic components and environmental friendliness, thereby becoming the novel film solar battery with the highest development potential, low cost and no pollution.

Description

technical field [0001] The invention relates to a semiconductor thin film solar cell, specifically a quaternary compound copper zinc tin sulfur (Cu 2 ZnSnS 4 ) Semiconductor thin film solar cells. Background technique [0002] With the gradual depletion of fossil fuels and the increasingly serious environmental pollution caused by the burning of fossil fuels, solar cells, as a clean and pollution-free energy source, are attracting more and more attention from all countries in the world. A solar cell is a device that uses the photovoltaic effect to directly convert solar energy into electrical energy. So far, many kinds of solar cells have been developed. Including monocrystalline silicon solar cells, polycrystalline silicon solar cells, amorphous silicon solar cells, compound semiconductor solar cells, etc. Considering the cost of batteries, people have turned their attention to thin-film solar cells. The materials currently used for thin-film solar cells mainly include...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042H01L31/032H01L31/18
CPCY02E10/50Y02P70/50
Inventor 褚君浩江锦春石富文
Owner 上海太阳能电池研究与发展中心
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