Photoetching development method

Abstract

The invention discloses a photoetching development method, comprising the steps of exposing and hard curing; the characteristic sizes of exposed photoresist patterns are less than target value; the hard curing temperature in the hard curing process is increased, so that the characteristic sizes of the gaps of hard-cured photoresist patterns are controlled in the target value range. The method effectively prevents the photoresist remaining in the gaps of the photoresist patterns to form photoresist residuals interconnection in the development process; the hard curing temperature in the hard curing process is increased, and the photoresist is softened, so that the characteristic sizes of the hard-cured photoresist patterns are larger, and the characteristic sizes of the gaps of photoresist patterns are controlled in the target value range. The invention can be widely used for the manufacturing of semiconductor devices.

Description

Technical field [0001] The invention relates to a method of photolithography development. Background technique [0002] The photolithography development process is an important technology in semiconductor manufacturing. In photolithography, the silicon wafer has gone through a series of process steps in the coating / developing machine. The upper surface of the pretreatment silicon wafer is coated with glue, glued, and baked (often called soft baking). The automatic transfer device inside the equipment transfers the silicon wafers between the operating positions. Another set of conveying device sends the glued silicon wafers one piece at a time into the alignment and exposure system. The photolithography machine directly engraves the pattern of the specific mask on the glued silicon wafer. After the exposed silicon wafer is transferred from the exposure system to the silicon wafer track system, a short post-exposure bake (commonly called post-bake) is required to provide photoresis...

AI Technical Summary

Problems solved by technology

There are two dimensions in the photolithographic pattern: the characteristic dimension D1 of the photoresist pattern and the characteristic dimension D2 of the photoresist pattern gap. It is relatively easy to have photoresist residual interconnection phenomenon (scum), which affects the subsequent etching process

Images