Method for implementing thick copper wire down-lead bonding

A technology of wire bonding and implementation method, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve unapplied problems, and achieve the effects of saving gold, strong welding wire and reducing manufacturing costs

Inactive Publication Date: 2010-07-14
宁波明昕微电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, wire bonding of fine copper wire (copper wire diameter φ0.8mil~φ2.0mil) has been gradually promoted, but thick copper wire ball bonding has not yet been applied due to many technical difficulties.

Method used

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  • Method for implementing thick copper wire down-lead bonding
  • Method for implementing thick copper wire down-lead bonding
  • Method for implementing thick copper wire down-lead bonding

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Embodiment Construction

[0038] The invention will be further described in detail below in conjunction with the embodiments of the accompanying drawings.

[0039] The main technical key points of the present invention are: protection of copper balls during crystallization, design optimization of a chopper, detection of chip aluminum layer thickness, and optimized matching of key process parameters.

[0040] Protection when the copper ball crystallizes

[0041] The protective gas device consists of four parts: the fixed foot 1 of the protective gas device fixed to the equipment, the first intermediate connection section 2, the second intermediate connection section 3, and the nozzle 4 of the protective gas device. The diameter of the nozzle requires φ2mm.

[0042] The fixed foot 1 of the shielding gas device is fixed on the welding head of the equipment, and the material of the fixed foot is aluminum alloy; the first intermediate connecting section 2 is connected with the fixed foot 1 of the shielding ...

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Abstract

The invention relates to a method for realizing crude copper wire lead bonding. The method comprises the steps of the protection during copper ball crystallization, the design optimization of a riving knife, the detection of the thickness of a chip aluminium layer and the optimized matching of key technical parameters. N2H2 protection gas with high purity and with the oxygen content being less than 1ppm is used for the protection during the copper ball crystallization. The shape of the riving knife is designed with reduced outer angle and increased inner angle, so as to produce stronger tail weld and avoid wire breaking during the crude copper wire lead bonding operation. 85 percent of phosphoric acid solution is used for detecting the thickness of the chip aluminium layer to ensure that the thickness of the aluminium layer meets the requirement of being thicker than 4um during the crude copper wire leading bonding and avoid the crater during the operation. The technical parameter selects and uses initial pressure to avoid the production of the crater. The invention can not only reduce the cost obviously, but also improve the reliability of the product.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging, in particular to a method for realizing wire bonding of thick copper wires used in semiconductor packaging. Background technique [0002] Gold wire bonding is the most widely used wire bonding technology in the electronics industry, but with the development of high-density packaging, copper wire bonding has attracted increasing attention. Copper wire bonding has many advantages: (1 ) Price advantage: the cost of copper wires of various specifications used in wire bonding is only 1 / 10 of that of gold wires. (2) Electrical and thermal properties: the electrical conductivity of copper is [0.62 (μΩ / cm)-1, which is greater than that of gold [0.42 (μΩ / cm)-1], and the thermal conductivity of copper is also higher than that of gold Gold, so copper wire can carry more current under the same diameter conditions, so that copper wires are not only used in power devices, but also used in smal...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/60H01L21/66
CPCH01L2924/01015H01L2224/48624H01L2924/01082H01L2224/05624H01L24/85H01L2924/01019H01L2924/01327H01L2924/01029H01L24/78H01L2224/78303H01L2924/01013H01L2224/78H01L2224/45147H01L2224/85H01L24/45H01L2924/01007H01L2924/01079H01L2924/14H01L2924/01005H01L2924/01033H01L2924/01006H01L2924/0102H01L2924/01014H01L2924/10253H01L2224/45144H01L2924/01075H01L2224/48799H01L2224/45H01L2224/45015H01L2224/85205H01L2924/00014H01L2224/48824H01L2924/00H01L2924/00012
Inventor 周理明劳行雁
Owner 宁波明昕微电子股份有限公司
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