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Gallium indium aluminum low congruent melting molten mass and use thereof in air purification

A melt and eutectic technology, which is applied to the separation of dispersed particles, chemical instruments and methods, separation methods, etc., can solve the problems of reducing the working life of the bubbler and failing to meet the requirements of gas purity, and achieve the improvement of purification efficiency, The effect of reducing production costs

Inactive Publication Date: 2009-03-11
刘庚宇
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With this method, arsine and other alkanes can be purified to a water vapor content of 0.07ppm and an oxygen content of 0.01ppm, which cannot meet the requirements of modern microelectronics for gas purity.
[0005] In addition, with the existing purification method, it is necessary to heat the eutectic melt to 180-220°C in order to activate it at the beginning, which will lead to the dissolution of the stainless steel of the bubbler to a certain extent, thereby reducing bubbling device working life

Method used

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  • Gallium indium aluminum low congruent melting molten mass and use thereof in air purification
  • Gallium indium aluminum low congruent melting molten mass and use thereof in air purification
  • Gallium indium aluminum low congruent melting molten mass and use thereof in air purification

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Embodiment 1

[0013] 1. Test method

[0014] (1) At room temperature, add 300 grams of gallium, 30 grams of indium, 15.59 grams of mercury, and 16.5 grams of aluminum into the bubbler, and a liquid melt will be formed in almost an hour; 12ppm water vapor, 10ppm oxygen silane; the impurity content in the gas was measured at different time points, and the test results are shown in Table 1.

[0015] (2) At room temperature, add 300 grams of gallium, 30 grams of indium, 13.86 grams of mercury, and 16.5 grams of aluminum into the bubbler, and a liquid melt will be formed in almost an hour; The arsine of water vapor and 12ppm oxygen; the impurity content in the gas was measured at different time points, and the test results are shown in Table 2.

[0016] (3) At room temperature, add 300 grams of gallium, 30 grams of indium, 17.325 grams of mercury, and 16.5 grams of aluminum into the bubbler, and a liquid melt will be formed in almost an hour; Water vapor and 12ppm oxygen arsine; the impurity c...

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Abstract

The invention discloses a gallium indium aluminum eutectic molten mass and the application thereof for purifying the alkane-typed gas (silane, arsine, phosphorane, germane, ammonia and borane) or the mixed gas formed by alkane-type and hydrogen and pertains to the high pure substance field. In the invention, adding 4-5% of mercury in the existing gallium indium aluminum eutectic molten mass results in that the aluminum dissolves quickly in the molten mass at the condition of room temperature, therefore heating the molten mass to 180-220 DEG C for dissolving the aluminum is unnecessary, in this way, the service life of a bubbler is prolonged greatly (the service life of the bubbler can be prolonged six times), meanwhile, for the molten mass does not need to be dissolved at high temperature, the production cost is reduced further. Additionally, compared with the existing method, the efficiency that the eutectic molten mass of the invention purifies gas is improved 10-40 times.

Description

technical field [0001] The invention relates to a melt and its application, in particular to a gallium indium aluminum eutectic melt and its use in purifying alkane gases (silane, arsine, phosphine, germane, ammonia, borane) or alkane The application in the purity of the mixed gas formed by hydrogen and hydrogen belongs to the field of high-purity substances. Background technique [0002] Usual gas purification method is to utilize zeolite adsorption impurity (B.H. Xiu Lin etc., the deep purification of hydrogen with deformed zeolite, high-purity material, 1990 5 volumes 172-174 pages). But the alkanes (silane, arsine, phosphine, germane, ammonia, borane) widely used in the field of microelectronics and the gas distribution with their main components do not use this method for purification of these gases , because there are fewer zeolites to choose from for the adsorption of the impurities contained in the above alkanes as the basic components (the contained impurities are ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01D53/00B01D53/14
Inventor 刘庚宇
Owner 刘庚宇
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