Micro-cavity optical amplifier structure of 980 nanometer semiconductor with high gain and low noise

Abstract

The invention relates to a structure for a 980nm semiconductor micro-cavity optical amplifier with high gain and low noise, which is characterized in that the structure comprises a substrate, a buffer layer, a lower Bragg reflector, a lower barrier layer, a quantum well layer, an upper barrier layer, an upper Bragg reflector and an electrode contact layer, wherein the substrate is used for performing epitaxial growth of each layer of materials of the optical amplifier on the substrate; the buffer layer is made on the substrate; the lower Bragg reflector is made on the buffer layer; the lower barrier layer is made on the lower Bragg reflector; the quantum well layer is made on the lower barrier layer; the upper barrier layer is made on the quantum well layer; the upper Bragg reflector is made on the upper barrier layer; the electrode contact layer is made on the upper Bragg reflector, so as to form the micro-cavity optical amplifier. The micro-cavity optical amplifier is optically etched into a strip-shaped table surface; furthermore, two end surfaces of the table surface are etched into inclined surfaces with inclined angles of 45 degrees and coated with an anti-reflection film.

Description

technical field [0001] The invention belongs to the field of semiconductor optical amplifiers, in particular to a high-gain, low-noise 980nm semiconductor microcavity optical amplifier structure. Background technique [0002] Semiconductor optical amplifiers are important components in all-optical network transmission systems and optical fiber interconnection networks, and have a very wide range of applications and market demands in communications, military, aerospace, and private data networks. Compared with the currently dominant fiber amplifier, it has the advantages of small size, low power consumption, low cost, and easy integration with other optoelectronic devices. In the optical network, it will be widely used in relay amplification, wavelength conversion, optical switch, uplink and downlink routing, etc. Semiconductor optical amplifiers, including traveling wave optical amplifiers and vertical cavity surface optical amplifiers, have made great progress. As the req...

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Problems solved by technology

Moreover, if the gain is increased by lengthening the cavity length of the traveling wave optical amplifier, the longitudinal mode spacing will be too small, so that the number of longitudinal modes participating in the mode competition will be large.

This largely limits the carrier concentration in the active region, suppressing the signal gain

For quantum wells and quantum dot vertical cavity surface optical amplifiers, the gain is not large because the active region is very thin

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