Folding cavity self-raman frequency doubling completely solid yellow laser

A folded cavity and all-solid technology, applied in lasers, laser parts, phonon exciters, etc., can solve the problems of low peak power of fundamental frequency light, poor Raman light efficiency, low power, etc., and achieve high output power and Conversion efficiency, stable performance, and performance-improving effects

Inactive Publication Date: 2008-11-19
SHANDONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The sum-frequency method has the disadvantages of large volume, low power, poor conversion efficiency, unstable structure, and difficulty in realization; the method of frequency-doubling Raman light is simpler than the method of sum-frequency, but most of the world uses extracavity frequency-doubling Raman light at present. Mann's method (Low threshold, diode end-pumped Nd 3+ :GdVO 4 self-Ramanlaser, "Optical Materials", Vol.29, 2007, 1817-1820) and intracavity frequency-doubling continuous Raman light method (Efficient all-solid-state yellow laser source producing 1.2-W average power, "Optics Letters ", Vol.24, 1999, 1490-1492; All-solid-state 704mW continuous-waveyellow source based on an intracavity, frequency-doubled crystalline Raman laser, "Optics Letters", Vol.32, 2007, 1114-1116)
The method of frequency doubling Raman light outside the cavity is poor in frequency doubling efficiency due to the low power of Raman light outside the cavity, and the output yellow light power is low; while the method of frequency doubling continuous Raman light in the cavity is due to the peak power of the fundamental frequency light Low, the efficiency of conversion into Raman light is poor, and high-power yellow light output cannot be obtained

Method used

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  • Folding cavity self-raman frequency doubling completely solid yellow laser
  • Folding cavity self-raman frequency doubling completely solid yellow laser

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Embodiment 1

[0025] Embodiment 1 of the present invention such as figure 1 As shown, it includes a laser diode LD end pump source and a resonant cavity; the resonant cavity is composed of a rear cavity mirror 4, a 45-degree mirror 7 and a total reflection mirror 9, and the Raman crystal 5 is selected from the Raman crystal 5 doped with neodymium gadolinium vanadate Nd:GdVO 4The crystal, the Q-switching device 6 is an acousto-optic Q-switching device, and the frequency doubling crystal 8 is potassium titanyl phosphate KTP crystal. The self-Raman crystal 5 and the acousto-optic Q-switching device 6 are placed in the rear cavity mirror 4 and the 45-degree mirror 7, and the frequency-doubling crystal 8 is placed in the 45-degree mirror 7 and the total reflection mirror 9; The sides of the device 6 and the frequency doubling crystal 8 are surrounded by metal blocks with pipes, and the pipes in the metal blocks are continuously fed with circulating cooling water to lower the temperature of the c...

Embodiment 2

[0036] Embodiment 2 of the present invention such as figure 2 As shown, it includes a laser diode LD side pump module 10 and a resonant cavity; the resonant cavity is composed of a rear cavity mirror 4, a 45-degree mirror 7 and a total reflection mirror 9, and the self-Raman crystal 5 is neodymium-doped barium tungstate Nd:BaWO 4 The crystal, the Q-switching device 6 is an acousto-optic Q-switching device, and the frequency doubling crystal 8 is potassium titanyl phosphate KTP crystal. The LD side pump module 10 and the self-Raman crystal 5 and the acousto-optic Q-switching device 6 are placed in the rear cavity mirror 4 and the 45-degree mirror 7, and the frequency-doubling crystal 8 is placed in the 45-degree mirror 7 and the total reflection mirror 9; They are all surrounded by metal blocks with pipes, and the pipes in the metal blocks are continuously circulated with cooling water to lower the temperature of the crystals.

[0037] The laser diode LD side pump module 10 i...

Embodiment 3

[0047] Same as embodiment 1, only described self-Raman crystal 5 is doped neodymium yttrium vanadate Nd:YVO 4 Crystal, size 3×3×15mm 3 , cut along the c-axis direction defined by physics, both ends of the crystal are coated with anti-reflection coatings in the 1000nm-1200nm band (the transmittance is greater than 99.8%), and the crystal doping concentration is 2.2-at.%. A Raman crystal 5 and an acousto-optic Q-switching device 6 are placed in the rear cavity mirror 4 and the 45-degree mirror 7, and a frequency doubling crystal 8 is placed in the 45-degree mirror 7 and the total reflection mirror 9. The cavity length of the resonant cavity is 13 cm.

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Abstract

Disclosed is an all-solid-state double frequency yellow self-Raman laser device with a folded cavity, which includes a LD (laser diode) pump source and a resonator. The resonator is composed of a rear cavity mirror, a 45 degrees reflection mirror and a total reflective mirror. The laser device of the invention is characterized in that a self-Raman crystal and a Q value adjusting device are arranged between the rear cavity mirror and the 45 degrees reflection mirror; a frequency doubling crystal is arranged between the 45 degrees reflection mirror and the total reflective mirror. The temperature of the self-Raman crystal, the Q value adjusting device and the frequency doubling crystal is controlled by a cooling device. Compared with prior art, the laser device of the invention has small volume, high output power and high conversion efficiency. Due to the small volume, stable performance and low cost, the laser device can be widely used in laser medical treatment field.

Description

(1) Technical field [0001] The invention relates to a solid-state laser, in particular to a folded-cavity self-Raman frequency-multiplied all-solid-state yellow laser. (2) Background technology [0002] Laser technology is one of the major inventions of the 20th century, and it has been widely used in various fields such as industrial production, communication, information processing, medical and health, military affairs, cultural education, and scientific research. With the major breakthroughs in semiconductor laser diode technology, solid-state lasers have been strongly developed, and their application fields have been continuously expanded. The all-solid-state laser pumped by LD is a second-generation new solid-state laser with high efficiency, stability, good beam quality, long life and compact structure. It has become one of the key development directions of laser science. It is used in space communication, optical fiber communication , Atmospheric research, environmen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/108H01S3/109H01S3/11H01S3/0941H01S3/042H01S3/08H01S3/00
Inventor 陈晓寒张行愚王青圃李述涛丛振华刘兆军范书振张琛
Owner SHANDONG UNIV
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