Sensitive large signal output minitype pressure sensor

Abstract

The embodiment of the invention provides a sensitive and large-signal output minisize pressure sensor, specifically including that a conductive floating layer of capacitance part of the sensor is modified and extended to a gate insulation layer of the MOSFET device to form a floating gate of the MOSFET device, accordingly the capacitance part of the sensor is separated from the MOSFET device therebelow, and the structural dimension of which does not influence the MOSFET device, therefore the MOSFET device can be made into smaller dimension which is suitable to be used in micro / nano system, simultaneously can overcome effectively short channel effect of device, improve simulated attribute of circuit, accomplish signal amplification directly with larger amplification multiple, reduce development and application costs of sensor without using high-dielectric material.

Description

technical field [0001] The invention relates to the field of sensors, in particular to a sensitive large-signal output miniature pressure sensor. Background technique [0002] With the development of science and technology, in the field of sensors, the signals that need to be collected and processed are getting weaker and weaker, and have reached the nanometer level. These signals are easily overwhelmed by noise and difficult to detect. At the same time, the size of the sensor is also continuously reduced. At present, the size of the weak signal sensor has broken through 100nm and is advancing to 40nm. If it continues to decrease, the size of the sensor will be close to the de Broglie wavelength of electrons, and the quantum effect will become more significant. If the size is less than 10nm, some new features such as Coulomb blockage will appear; on the other hand, the processing circuit is becoming more and more complex. Generally, the output signal of the sensor is a non-e...

AI Technical Summary

Problems solved by technology

[0006] The main advantage of this CAP-FET structure sensor is that it can directly convert the sensor signal into an electrical signal output, but the output signal is very weak, such as image 3 As shown in the curve diagram, complex processing circuits must be added to the output signal, while the general amplifier circuit is still composed of transistors as the core, and various peripheral circuits need to be added, which will still make the circuit structure very complicated , cannot highlight the superiority of the CAP-FET structure, and even cause serious errors in the output results, which is why the CAP-FET structure is not widely used; in addition, from the perspective of the structure of the CAP-FET, it is The sensor capacitance part is directly designed into the gate dielectric of the MOSFET device, and the floating gate of the MOSFET device is used as the upper plate of the sensor, but at the same time, the area of ​​the MOSFET device is easily affected by the area of ​​the sensor capacitance, and the gate length of the MOSFET is too large , resulting in difficulty in signal transmission; in addition, due to the influence of the capacitance on the gate, the MOSFET device has a high threshold voltage, which is not suitable for working in a CMOS circuit; and in terms of the size of the CAP-FET, its size has reached a deep In the submicron and nanoscale range, the short channel effect of MOSFET devices is very obvious, so in order to maintain the gate control of the short channel effect, the thickness of the gate dielectric must be reduced, and it is necessary to develop materials with high dielectric constants. Increased sensor development and application costs

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