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Rinse liquid and uses thereof

A technology of cleaning liquid and guanidine compounds, applied in the field of cleaning liquid, can solve the problems of large environmental pollution and unpleasant smell of organic ammonia such as ammonia water, and achieve the effect of low metal ion content, reducing metal ion pollution and environmental pollution

Inactive Publication Date: 2008-09-24
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The ammonia water and other organic ammonia used in the cleaning solution has an unpleasant smell and causes great environmental pollution.

Method used

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  • Rinse liquid and uses thereof
  • Rinse liquid and uses thereof
  • Rinse liquid and uses thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～13

[0020] Table 1 shows the formulas used in cleaning solution Examples 1-13, water is the balance. According to the ingredients and their contents given in the table, first add water and guanidine compounds, stir evenly, adjust to the required pH value with sulfuric acid, add oxidant and mix evenly before use.

[0021] Table 1 cleaning solution embodiment 1~13

[0022]

[0023]

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PUM

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Abstract

The invention discloses cleaning fluid, which comprises at least an oxidizer, at least a carbamidine compound and water. The invention further discloses application of the cleaning fluid in cleaning wafer after the wafer is polished chemically and mechanically. The cleaning fluid can clean polishing particles and chemical substance remaining on the surface of wafers after being polished chemically and mechanically. In addition, the cleaning fluid contains few metallic ions and is odorless, thus reducing pollution of metallic ions and environmental pollution.

Description

technical field [0001] The invention relates to a cleaning solution and its application in wafer cleaning after chemical mechanical polishing. Background technique [0002] In the manufacturing process of semiconductor devices, chemical mechanical polishing (CMP) is often used to planarize the surface of wafers. After the polishing slurry polishes the wafer, the surface of the wafer will remain with abrasive particles, chemical components in the polishing slurry, and reaction products of the polishing slurry. These pollutants must be cleaned before entering the next step, otherwise it will affect the subsequent process. process and chip reliability. Therefore, a cleaning solution is used to clean the wafer surface after wafer grinding. The cleaning solution after the traditional chemical mechanical polishing is an alkaline solution based on ammonia water, such as TW494020B discloses a cleaning solution for polysilicon chemical mechanical polishing, that is, adding surfacta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D7/32H01L21/304C11D7/18C11D7/26
CPCC11D7/26C11D7/04H01L21/02065H01L21/02074C11D7/3272
Inventor 荆建芬杨春晓王麟
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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