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Highly-effective high accuracy sapphire polishing liquid and preparation method thereof

A high-precision, polishing liquid technology, used in grinding/polishing equipment, polishing compositions, chemical instruments and methods, etc., can solve the problems of unsuitable cleaning process, high solid content, low efficiency, etc., and achieve high polishing efficiency and solid state. Low content and the effect of reducing the burden

Active Publication Date: 2008-07-30
江苏集萃中以科技产业发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The sapphire polishing liquid currently on the market has a high solid content and low efficiency. It is easy to harden during the polishing process and is easy to dry on the sapphire surface, which is not suitable for the subsequent cleaning process.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Weigh 100 grams of silica sol with a particle size of about 15 nanometers and a solid content of 30%, add it to 882 grams of water, and stir evenly at room temperature. Then add 10.0 grams of EDTA dipotassium salt, and stir further. Continue to add 8.0 grams of silane polyglycol ether. Finally the pH was adjusted to 10 with potassium carbonate. The final conductivity was 3.2ms.

[0015] The prepared samples were polished on a Logitech CDP single-side polisher. Down pressure: 2psi, rotation speed of the lower plate and carrier plate is 50RPM, flow rate of polishing liquid: 100ml / min. The polishing rate of the polishing liquid was 61.2 nm / min. There is no deposition on the surface of the polishing machine and the polished product.

Embodiment 2

[0017] Weigh 50 grams of silica sol with a particle diameter of about 15 nanometers and a solid content of 30%, add it to 1822 grams of water, and stir evenly at room temperature. Then add 13.5 grams of tetramethylammonium chloride, and stir further. Continue to add 4.5 grams of polyethylene glycol ether. Finally the pH was adjusted to 10 with potassium carbonate. The final conductivity is 100 μs.

[0018] The prepared samples were polished on a Logitech CDP single-side polisher. Down pressure: 2psi, rotation speed of the lower plate and carrier plate is 50RPM, flow rate of polishing liquid: 100ml / min. The polishing rate of the polishing liquid was 83.7 nm / min. There is no deposition on the surface of the polishing machine and the polished product.

Embodiment 3

[0020] Weigh 150 grams of silica sol with a particle size of about 50 nanometers and a solid content of 30%, add it to 1722 grams of water, and stir evenly at room temperature. Then add 13.5 grams of tetramethylammonium chloride, 10 grams of EDTA dipotassium salt, and stir further. Continue to add 10 grams of polyethylene glycol ether. Finally the pH was adjusted to 10 with copper sulfate. The final conductivity was 48ms.

[0021] The prepared samples were polished on a Logitech CDP single-side polisher. Down pressure: 2psi, rotation speed of the lower plate and carrier plate is 50RPM, flow rate of polishing liquid: 100ml / min. The polishing rate of the polishing liquid was 90.5 nm / min. There is no deposition on the surface of the polishing machine and the polished product.

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Abstract

The invention provides an efficient high-precision sapphire polishing solution and the preparing method, which relates to the polishing technology on sapphire, in particular to the polishing solution technology which can finely polish the surface. Firstly, nano silica sol particles, the particles diameters of which are 15-80 nanometers, are dispersed into water to form suspension; and then complexation agent is added into the suspension; and then surface active agent is added into the suspension; finally, the PH value of the suspension is regulated to 10-11. The invention has simple and rational production process, can be produced simply, contains low solid content, has high polishing efficiency, has strong stability, can hardly deposit on the surface of the polishing machine and the object to be polished, can hardly be air-dried on the surface of the sapphire after polishing due to the unique fluidity, and can lighten the burden of the following cleaning process greatly.

Description

technical field [0001] The invention relates to a polishing technology for sapphire, especially a polishing liquid technology for surface fine polishing. Background technique [0002] The sapphire fine polishing liquid currently on the market mainly uses silica sol as a polishing abrasive. Under the alkaline material, the water and silicon oxide of the silica sol form aluminum silicate with the surface of the sapphire, and the hard sapphire is cut and polished with the help of mechanical force. The sapphire polishing fluid currently on the market has a high solid content and low efficiency. It is easy to harden during the polishing process, and it is easy to air dry on the sapphire surface, which is not suitable for the subsequent cleaning process. Contents of the invention [0003] The purpose of the present invention is to invent a high-efficiency and high-precision sapphire polishing liquid with high polishing efficiency, long polishing life, less hardening during the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/18B24B9/16
Inventor 孙韬
Owner 江苏集萃中以科技产业发展有限公司
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