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Method for preparing stannic oxide/silica nano composite material

A nanocomposite material, tin dioxide technology, applied in the direction of silicon dioxide, tin oxide, silicon oxide, etc., can solve the problems of reducing gas sensitivity, photocatalytic activity and other application performance, and achieve excellent thermal stability, preparation Simple method and wide range of effects

Inactive Publication Date: 2008-05-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the process of high temperature treatment, the process of crystallization of tin dioxide is usually accompanied by hard agglomeration, particle enlargement and decrease of specific surface area, which seriously reduces its gas sensitivity, photocatalytic activity and other application properties.

Method used

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  • Method for preparing stannic oxide/silica nano composite material
  • Method for preparing stannic oxide/silica nano composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0026] Under stirring, add citric acid to 660ml of water until the pH value of the solution is 1.5, then add 11.6g of tin tetrachloride, stir to dissolve; then heat to 50°C, add 19.8ml of ethyl orthosilicate, stir until completely hydrolyzed, A transparent sol was formed. Then, under vigorous stirring, ammonia water was slowly added until a gel was formed. Then the gel was transferred to a polytetrafluoroethylene-lined hydrothermal kettle for hydrothermal reaction at 150°C for 10 hours. The obtained product was filtered, washed with deionized water until there was no chloride ion, dried at 110° C., and ground. That is, tin dioxide / silicon oxide nanocomposite particles with a mass ratio of silicon oxide of 10% were obtained. Observed under the electron microscope, the diameter of this kind of nanocomposite particles is 4.5 nanometers, the particles are spherical, uniform, and have good dispersion, and the specific surface area is 150.6m 2 / g. XRD measurement results show th...

Embodiment approach 2

[0028] Using the preparation process of the above-mentioned Example 1, the difference is that 59.5 ml of tetraethyl orthosilicate was added to prepare tin dioxide / silicon oxide nanocomposite particles with a silicon oxide mass ratio of 25%. Observed under the electron microscope, the diameter of this kind of nanocomposite particles is 4.0 nanometers, the particles are spherical, uniform, good dispersion, and the specific surface area is 259.0m 2 / g. XRD measurement results show that tin dioxide is rutile. The thermal stability investigation proves that it has excellent thermal stability: the sample is calcined at 400°C for 2 hours, the particle size remains at about 4.8 nanometers, and the specific surface area is 208.5m 2 / g; the sample was calcined at 800°C for 1 hour, the particle size was about 16 nanometers, and the specific surface area was 132.6m 2 / g.

Embodiment approach 3

[0030] Under stirring, add citric acid to 660ml of water until the pH of the solution is 2.0, then add 58g of tin tetrachloride, stir to dissolve; then heat to 40°C, add 89ml of tetraethyl orthosilicate, stir until completely hydrolyzed and form a transparent Sol. Then, under vigorous stirring, ammonia water was slowly added until a gel was formed. Then the gel was transferred to a polytetrafluoroethylene-lined hydrothermal kettle for hydrothermal reaction at 150°C for 10 hours. The obtained product was filtered, washed with deionized water until there was no chloride ion, dried at 105° C., and ground. That is, the silicon oxide mass ratio is 50% tin dioxide / silicon oxide nanocomposite particles. Observed under the electron microscope, the diameter of this kind of nanocomposite particles is 3.8nm, the particles are spherical, uniform, and have good dispersion, and the specific surface area is 278.9m 2 / g. XRD measurement results show that tin dioxide is rutile. The therma...

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Abstract

The invention discloses a preparation method of a tin dioxide / silicon oxide nanocomposite material, which belongs to the technical field of inorganic chemical materials, and specifically relates to a preparation method of a tin dioxide nanometer material. The invention uses tin tetrachloride as a tin source, sodium silicate or tetraethyl orthosilicate as a silicon source, and adopts a sol-gel-hydrothermal reaction crystallization process to prepare the tin dioxide / silicon oxide nanocomposite material. In the prepared tin dioxide / silicon oxide nanocomposite material, the silicon oxide is mainly coated on the surface of the tin dioxide. The preparation method of the invention is simple, easy to operate and suitable for large-scale production. The prepared tin dioxide / silicon oxide nanocomposite material prepared by sol-gel-hydrothermal method has uniform particles, large specific surface area, good stability and monodispersity, and can be used in gas sensors, photocatalysts, photoelectric materials and catalyst supports.

Description

technical field [0001] The invention belongs to the technical field of inorganic nanometer materials, and in particular relates to a preparation method of a tin dioxide / silicon oxide nanocomposite material. Background technique [0002] Tin oxide nanoparticles have good application prospects in photoelectric devices for sensors, solar cells, anode materials for secondary lithium-ion batteries, photocatalysts, and catalyst carriers. In particular, it is currently the most promising material for gas sensors. Studies have proved that reducing the particle size of tin dioxide and increasing its surface area are effective ways to improve its sensor sensitivity, photocatalytic activity and other uses. The current main method is to add metal ions such as Fe, Cu, Co, Cr, Mn and Mg to tin dioxide to reduce the particle size and increase its surface area. However, in order to obtain a good response to the gas in the application of the tin dioxide sensor, its working temperature is r...

Claims

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Application Information

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IPC IPC(8): C01G19/02C01B33/12
Inventor 祖小涛王治国李志洁彭强祥
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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