Method for cleaning chemical vapour deposition chamber

Abstract

The invention discloses a method for cleaning a chemical vapor phase deposition chamber, which comprises such procedures as vacuuming the deposition chamber, heating the deposition chamber, inputting clean air to remove any attachment in the deposition chamber, and turning off the clean air. The method can substitute a wet cleaning method to clean completely the deposition chamber, is easy and rapid to operate, can reduce the idle time of equipment and improve the productivity.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a cleaning method for a chemical vapor deposition chamber. Background technique [0002] As the critical dimensions of devices shrink, the control of contamination on the wafer surface becomes more and more critical. If pollution sources such as particles are introduced during the production process, it may cause open circuit or disconnection of the circuit. Therefore, in semiconductor process manufacturing, how to avoid pollution in process manufacturing must be paid attention to. With the improvement of equipment automation in production, the interaction between personnel and products becomes less, and the focus of preventing particles in production has been more focused on the particles produced by production equipment. For example, the shedding of the accumulated deposits on the chamber wall of the equipment is a very common source of pollution. Therefore...

AI Technical Summary

Problems solved by technology

[0005] 1. The wet cleaning process is long, and the CVD equipment cannot be used during the whole cleaning process, which greatly increases the idle time of the equipment and is not conducive to production efficiency

[0006] 2. The furnace tube is generally made of quartz, which is vulnerable to damage. Every time the furnace tube is cleaned, the disassembly and transportation of the furnace tube may cause damage to the furnace tube due to human factors

[0007] 3. During the wet cleaning process, the furnace tube is soaked in HF corrosion solution, and the HF acid corrosion solution can not only corrode the silicon oxide, silicon oxide or silicon oxynitride deposits on the furnace wall, but also damage the The furnace tube itself is damaged, which shortens the service life of the furnace tube

However, this method can only remove the suspended impurity attachments in the furnace tube, and has little effect on the attachments that have been attached to the furnace wall during the deposition process, and has a limited cleaning effect on the furnace tube, so it can reduce the wetness of the furnace tube. The number of cleanings is also quite limited, and the furnace tubes still need to be wet-cleaned on a regular basis

It cannot fundamentally solve a series of problems caused by wet cleaning of the deposition chamber

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