Image sensing part and its making method

Abstract

The invention provides an image sensing element and a producing method. The method is characterized in that a flat layer is formed on a semiconductor base which comprises an pixel array area, an optical black area and a logical area to cover an optical sensing element array in the pixel array area and an optical element in the optical black area, then a patterned metal layer is formed in the area which corresponds to the pixel array area and the logical area on the flat layer, but the patterned metal layer can not be formed above the optical black area, a second flat layer is formed on the semiconductor base, and the second flat layer covers the patterned metal layer, an optical black layer is formed on the second flat layer of the optical black area under the condition that the temperature is below 400 DEG C. The method also includes steps for performing a dangling bond passivation technology on a photosensitive diode contained in the optical sensing elements of the pixel array area and the optical black area after the second flat layer is formed and before the optical black layer is formed.

Description

technical field [0001] The present invention relates to an image sensor and its manufacturing method, in particular to a complementary metal oxide semiconductor transistor image sensor and its manufacturing method. Background technique [0002] Complementary metal-oxide-semiconductor transistor image sensors (CMOS image sensors, CIS) and charge-coupled devices (charge-coupled devices, CCDs) are optical circuit components commonly used in the prior art to convert light into electronic signals. Both of them have a wide range of applications, including scanners, video cameras, and cameras, etc., but because charge-coupled devices are limited by the high price and large volume, currently the complementary metal-oxide-semiconductor transistor image sensor on the market Meters are more common. [0003] Since the complementary metal-oxide-semiconductor transistor image sensor is produced by traditional semiconductor technology, it can greatly reduce the required cost and component...

AI Technical Summary

Problems solved by technology

However, since there is a patterned metal layer 120 for light-shielding, its metal will react with hydrogen gas, hindering the passivation of dangling bonds.

Therefore, there will still be a lot of dark current

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