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Method and apparatus for growing a group (III) metal nitride film and a group (III) metal nitride film

A nitride, thin film technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of expensive heater, uneconomical heater, high cost and so on

Active Publication Date: 2008-02-13
GALLIUM ENTERPRISES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0022] However, due to the use of pyrolytic boron nitride and pyrolytic graphite, which are manufactured at high temperatures using chemical vapor deposition techniques using appropriate masks to grow the substrate including the heating element layer by layer, the These heaters are very expensive
Due to their high cost, these heaters are not economically viable for the fabrication of commodity metal nitride films using RPECVD techniques

Method used

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  • Method and apparatus for growing a group (III) metal nitride film and a group (III) metal nitride film
  • Method and apparatus for growing a group (III) metal nitride film and a group (III) metal nitride film
  • Method and apparatus for growing a group (III) metal nitride film and a group (III) metal nitride film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0626] Comparative Example 1 - Exposure to growth conditions inside a growth chamber for growing gallium nitride thin films Gold film

[0627]A thin evaporated gold film was exposed to the plasma conditions used in the method described in International PCT Patent Application No. PCT / AU2003 / 000598. These conditions include: the pressure in the growth chamber is about 1 Torr, but no trimethylgallium is present. Using the same conditions as for film growth in the presence of trimethylgallium, the resulting GaN film is slightly yellowish. For the gold film, damage was observed when it was peeled from the glass substrate on which it was deposited. When the film was peeled off, the glass substrate was at room temperature. It is believed that the incident nitrogen species during remote plasma travel is still very energetic during film growth, despite the considerable distance (approximately 25 cm) between the plasma source and the substrate.

[0628] Example 2 - GaN film gro...

Embodiment 3

[0632] Example 3 - A series of GaN thin films grown using RPECVD at 3 Torr

[0633] The results of various GaN thin films grown using methods according to the invention in devices according to the invention are shown below and discussed. In this method, a lower base pressure (approximately 10 -7 Torr), maintaining good control over gas flow during GaN thin film growth by using pressure valves controlled by Baritron feedback from manometers. The nitrogen flow rate was approximately 600 sccm / min. Trimethylgallium was introduced as a mixture with nitrogen carrier gas at a flow rate of approximately 5 sccm / min. The ratio of trimethylgallium and nitrogen carrier is about 1:2000, and the pressure during film growth is 3 Torr.

[0634] The setup differs in its geometry from those previously used to grow GaN thin films, especially in the orientation of the introduced gas and plasma feeds. In the setup used, the incoming gas and plasma feed were directed down onto the substrate h...

Embodiment 4

[0659] Example 4 - Comparative example of a GaN thin film grown without any passivation

[0660] Conventional RPECVD systems without pre-vacuum locks pump down to approximately 2×10 -5 to 2×10 -6 Base pressure between Torr. The growth chamber was exposed to the ambient environment (although nitrogen flow was used during sample loading in an attempt to minimize exposure of the interior surfaces of the device to atmospheric oxygen). A nitrogen purifier is used to keep impurities in the nitrogen to less than 1 part per billion.

[0661] When the system is not in use, the growth chamber is kept under vacuum to avoid contact of the interior surfaces of the device with atmospheric oxygen. The system pressure is usually maintained at the aforementioned base pressure.

[0662] For thin film growth, the substrate was introduced into the system after turning off the vacuum pump from the growth chamber and flushing with purge nitrogen. The substrate is introduced through the sampl...

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Abstract

A process and apparatus for growing a group (III) metal nitride film by remote plasma enhanced chemical vapour deposition are described. The process comprises heating an object selected from the group consisting of a substrate and a substrate comprising a buffer layer in a growth chamber to a temperature in the range of from about 400 DEG C to o about 750 DEG C, producing active neutral nitrogen species in a nitrogen plasma remotely located from the growth chamber and transferring the active neutral nitrogen species to the growth chamber. A reaction mixture is formed in the growth chamber, the reaction mixture containing a species of a group (III) metal that is capable of reacting with the nitrogen species so as to form a group (III) metal nitride film and a film of group (III) s metal nitride is formed on the heated object under conditions whereby the film is suitable for device purposes. Also described is a group (III) metal nitride film which exhibits an oxygen concentration below 1.6 atomic%.

Description

technical field [0001] The present invention relates to the growth of thin films of gallium nitride, indium nitride and aluminum nitride or of alloys of these substances. More specifically, the present invention relates to a method and apparatus for growing gallium nitride thin films using Remote Plasma Enhanced Vapor Deposition (RPECVD), wherein electrically neutral but chemically active chemical species from a remotely generated nitrogen plasma It can be introduced into the growth chamber for growing gallium nitride thin films. The invention also extends to a method of reducing damage to gallium nitride films during the growth of gallium nitride films, and also to a method of passivating containment vessels made of aluminum, quartz or fused silica method. The invention also relates to heating. More particularly, the present invention relates to a device for heating substances to relatively high temperatures in harsh environments. Background technique [0002] Gallium n...

Claims

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Application Information

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IPC IPC(8): C23C16/34H01L21/205
Inventor K·S·A·布彻M－P·F·温特伯特埃普富凯P·P－T·陈J·L·P·坦恩哈韦D·I·约翰逊
Owner GALLIUM ENTERPRISES
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