Chemical and mechanical grinding method

Abstract

A chemical-mechanical grinding method comprises that a plurality of grinding pads and grinding heads are provided for material layers on the grinding chips; a plurality of antiseptic feed devices are provided and the antiseptic feed devices are used for supplying antiseptic to the grinding pads; the a plurality of grinding pads grind different chips at the same time; antiseptic is provided on the ground chip surface until all chips are ground. The method can prevent the chip surface from being polluted or corroded.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a chemical mechanical polishing method. Background technique [0002] With the increasing reduction of semiconductor devices, due to the excessive fluctuation of the wafer surface caused by the deposition process of multi-layer interconnection or filling aspect ratio, it is difficult to focus the lithography process, and the ability to control the line width is weakened, thereby reducing the overall wafer surface area. The consistency of the line width. The industry introduces chemical mechanical planarization (CMP), that is, the silicon wafer is placed on a grinding head, and the surface of the silicon wafer is brought into contact with a polishing pad, and the relative movement between the surface of the silicon wafer and the polishing pad makes Silicon wafer surface planarization. In the CMP process, a slurry (Slurry) is supplied between the surface of th...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a chemical mechanical polishing method to solve the problem that in the existing chemical mechanical polishing method, when multiple wafers are simultaneously polished, the wafer surface material is easily polluted or corroded before entering the next step

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