Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Setup method for indium-gallium-nitride p-n node type multi-node solar battery structure

A multi-junction solar cell, solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem of ternary alloy research starting soon

Inactive Publication Date: 2008-01-09
NANJING UNIV
View PDF0 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Currently on In x Ga 1-x N, especially In with high In composition and thick film x Ga 1-x The research on N ternary alloys has just started, and material growth technologies and physical properties such as material growth and p-type doping are still under continuous research and development.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Setup method for indium-gallium-nitride p-n node type multi-node solar battery structure
  • Setup method for indium-gallium-nitride p-n node type multi-node solar battery structure
  • Setup method for indium-gallium-nitride p-n node type multi-node solar battery structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] 1. Structure setup of InGaN p-n junction multi-junction solar cells

[0017] The multi-junction (including single-junction) solar cells need to use In with different In compositions. x Ga 1-x The determination process of N material and In composition is as follows: first calculate the maximum conversion efficiency, then obtain the optimal band gap of each material at this conversion efficiency, and finally obtain the corresponding In composition value. The theoretical calculation method of solar cell conversion efficiency is as follows: InGaN p-n junction solar cell satisfies the current-voltage equation of ideal p-n junction [1] , the following assumptions are made in the calculation process: 1) The structure of the solar cell is an ideal p-n junction; 2) The surface reflection of sunlight incident on the cell is ignored; 3) Each junction of the solar cell only absorbs energy greater than (including equal to, the same below) Photons with the forbidden band width of t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention is concerned with a setting method of structure to multi-junction solar battery in type of InGaN p-n. It takes current-pressure equation, relation formula between InxGa1-xN energy gap and In composing and correlative parameters of InxGa1-xN of solar battery in type of InGaN p-n to count the largest transition efficiency of InGaN multi-junction (solo-junction) solar battery and the best energy gap of junction material to get the said transition efficiency and corresponding value of In composing. Take InxGa1-xN with those different In composing as junction material and connect them with tunnel kink in series. Set metal conduct pole on the first junction n (or p)-Inx1Ga1-x1N and the last I junction p (or n)-InxiGa1-xiN, and cover film to reduce reflection on incidence surface.

Description

technical field [0001] The invention relates to a semiconductor solar cell. Especially involving a new type of semiconductor material In x Ga 1-x A method for setting the structure of Np-n junction multi-junction (including single-junction) solar cells. Background technique [0002] Since the 1990s, research on the application of Group III nitride materials and devices such as semiconductor gallium nitride GaN and its alloys such as aluminum gallium nitride AlGaN and indium gallium nitride InGaN has developed rapidly, mainly used in optoelectronic devices and high-frequency high-power microelectronic devices. In 2002, W.Walukiewicz and others in the United States found that the band gap of InN was 0.7eV, instead of 1.89eV as previously reported. This makes In x Ga 1-x The forbidden band width of N alloy is continuously adjustable from 3.4eV of GaN (x=0) to 0.7eV of InN (x=1) with the change of In composition x, and the corresponding wavelength of the absorption spectrum...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/068H01L31/05H01L31/052H01L31/054H01L31/0687
CPCY02E10/52Y02E10/544
Inventor 江若琏谢自力文博周建军陈敦军张荣韩平郑有炓
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com