Method for preparing no cut crystallitic polysilicon chip in use for high performance solar batteries
A technology for solar cells and polycrystalline silicon wafers, which is applied in the growth of polycrystalline materials, chemical instruments and methods, and single crystal growth. Less loss and better control accuracy
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Embodiment 1
[0011] Purchase 1000 grams of silicon raw materials with a purity higher than 9999 from the commercially available silicon crystal products, place them in a high temperature crucible and heat them to 1420 ℃ under constant temperature control. The electronic precision control stretching equipment is used to control the electronic temperature controller. Next, the molten silicon liquid is drawn at a high speed into a long piece of microcrystalline polycrystalline silicon wafer with a thickness of 0.3mm and a width of 10cm, and is arranged into a ready-to-use product.
Embodiment 2
[0013] Choose 1500 grams of silicon raw material with a purity higher than 9999 from the commercially available silicon crystal products and add the dopant boron in a regular amount, and place it in a high temperature crucible under constant temperature control and dust-free conditions to heat to 1450°C. Under the control of the electronic temperature controller of liquid level float technology, the molten silicon melt is floated and stretched into a long piece of microcrystalline polycrystalline silicon wafer with a thickness of 0.35mm and a width of 6cm and arranged into a ready-to-use product.
[0014] The silicon wafer products prepared in the above two embodiments are used in the preparation of solar cells, and the raw material cost is reduced by more than 50%, the comprehensive manufacturing cost is reduced by more than 35%, and the efficiency of the manufactured battery can reach 10-18%.
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