Multiple-temperature area heating body and method for manufacturing same
A manufacturing method and technology of heating body, which are applied in chemical instruments and methods, crystal growth, post-processing, etc., can solve the problems of affecting the stability of the temperature field, increasing the cost of equipment and difficulty of control, and simplifying the operation and maintaining the temperature field. , the effect of reducing costs
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Embodiment 1
[0034] A high-purity graphite resistance heating material is used to make a cylinder with an outer diameter of D=119mm, a wall thickness of T=4.5mm, and a height of H=260mm. According to the present invention, the heating element is grooved, wherein: H A =45mm, H B =215mm, H C =0; W A =45mm, W B =43mm, W C =0mm. Place the heating element in the temperature gradient crystal growth furnace, close the furnace, vacuum, fill with high-purity argon gas and raise the temperature, and measure the temperature distribution of the crystal growth zone, as shown in Figure 2 on line 1#.
Embodiment 2
[0036] A high-purity graphite resistance heating material is used to make a cylinder with an outer diameter of D=119mm, a wall thickness of T=4.5mm, and a height of H=260mm. According to the present invention, the heating element is grooved, wherein: H A =115mm, H B =145mm, H C =0; W A =45mm, W B =43mm, W C =0mm. Place the heating element in a temperature gradient crystal growth furnace, close the furnace, vacuum, fill with high-purity argon gas and raise the temperature, and measure the temperature distribution of the crystal growth zone, as shown in Figure 2 on line 2#.
Embodiment 3
[0038] A high-purity graphite resistance heating material is used to make a cylinder with an outer diameter of D=119mm, a wall thickness of T=4.5mm, and a height of H=260mm. According to the present invention, the heating element is grooved, wherein: H A =45mm, H B =180mm, H C =35mm; W A =45mm, W B =43mm, W C = 20mm. Place the heating element in a temperature ladder crystal growth furnace, close the furnace, vacuum, fill with high-purity argon gas and raise the temperature, and measure the temperature distribution of the crystal growth zone, as shown in Figure 2 on line 3#.
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