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Paster type light emitting type and process for manufacturing the same

A light-emitting diode and patch-type technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of inability to realize LED bare chip series connection, limit LED application, easy short circuit, etc., and reach the rated voltage High, loss-saving, simple connection effect

Inactive Publication Date: 2007-12-05
NANKER GUANGZHOU SEMICON MFG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the commonly used LED circuit boards are all aluminum substrates, and the aluminum substrate itself is a conductor, it is very easy to short-circuit during the processing of the integrated chip, and it is impossible to realize the series connection of the LED bare chips, and the current rated voltage of the LED bare chips is 4V. Below, to apply LEDs to lighting, generally connect several light-emitting diodes in series and connect them to a higher voltage power supply or connect them to an external control circuit and then connect them to a power supply, that is, a single LED cannot be directly connected to a higher voltage power supply. , which limits the application of LEDs as lighting sources

Method used

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  • Paster type light emitting type and process for manufacturing the same
  • Paster type light emitting type and process for manufacturing the same
  • Paster type light emitting type and process for manufacturing the same

Examples

Experimental program
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Effect test

Embodiment 1

[0037]As shown in Fig. 1a, Fig. 2, Fig. 3, and Fig. 4, the patch type light-emitting diode of this embodiment includes a bracket 1, an LED chip 2, a phosphor powder 5 covering the LED chip 2, and a protective glue 6. The protective glue 6 is made of silica gel or resin, and the bracket 1 includes a housing 10, two pins 11, 12, and a cooling column 13. The housing 10 is made of insulating material, and the cooling column 13 is embedded in the shell. body 10 and penetrates the casing 10 up and down. The LED chip 2 is a positive-mounted LED integrated chip, including a silicon substrate 20, an anode contact 21, a cathode contact 22 and 12 LED bare chips 23, the silicon substrate 20 is fixed on the heat dissipation column 13, and the anode The contact 21 and the cathode contact 22 are respectively connected to the two pins 11 and 12 through metal leads. The LED bare chips 23 are connected in parallel every three to form a group, and then the four groups are connected in series. I...

Embodiment 2

[0048] As shown in Figure 5 and Figure 6, the difference between this embodiment and Embodiment 1 is that the LED chip 2 of the chip-type light-emitting diode of this embodiment is a flip-chip LED integrated chip, and the P-type epitaxial layer 232 . The N-type epitaxial layer 231 is respectively flip-chip soldered on the metal layer 24 through solder balls 42 , and the solder balls 42 are gold ball plugs, and of course, may also be copper ball plugs or tin balls.

[0049] The remaining features of this embodiment are the same as those of Embodiment 1.

Embodiment 3

[0051] As shown in Fig. 7 and Fig. 8, the difference between the present embodiment and the first embodiment is that the substrate 230 of the patch type light-emitting diode of the present embodiment is aluminum oxide (Al 2 o 3 ) substrate, that is, the LED bare chip 23 is a two-electrode chip, the substrate 230 is welded or pasted on the metal layer 24, and the P-type epitaxial layer 232 and the N-type epitaxial layer 231 pass through the The metal wires 43 , 45 are welded on the adjacent metal layers 24 .

[0052] The remaining features of this embodiment are the same as those of Embodiment 1.

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Abstract

The invention publics a paste piece type light emitter diode which has high rated voltage, can directly connected with the power source and its manufacture method. The light emitter diode includes the support (1), LED chip (2), the support (1) includes the shell (10), two pins (11, 12), heat dispersion column (13), the heat dispersion column (13) insert into the shell (10) and passes through the shell (10), LED chip (2) includes the silicon substrate (20), anode junction (21), cathode junction (22) and the certain LED bare chip (23), the silicon substrate (20) fixes on the heat dispersion column (13), the anode junction (21) and cathode junction (22) separately connects with two pins (11, 12), between the LED bare chip (23) connects or the series-parallel connection built-up connection. The manufacture method includes the following steps: the manufacture frame, embark on the chip, hit the line, put on the luminous powder, put on the protect rubber, clubfoot, cut muscle. The invention may widely apply in the LED illumination domain.

Description

technical field [0001] The invention relates to a patch type light emitting diode and a manufacturing method thereof. Background technique [0002] Light-emitting diodes, or LEDs, are being more and more commonly used in the field of lighting due to their advantages of small size, high brightness, and low power consumption. Since the commonly used LED circuit boards are all aluminum substrates, and the aluminum substrate itself is a conductor, it is very easy to short circuit during the processing of the integrated chip, and it is impossible to realize the series connection of the LED bare chips, and the current rated voltage of the LED bare chips is 4V. Below, to apply LEDs to lighting, generally connect several light-emitting diodes in series and connect them to a higher voltage power supply or connect them to an external control circuit and then connect them to a power supply, that is, a single LED cannot be directly connected to a higher voltage power supply. , which li...

Claims

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Application Information

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IPC IPC(8): H01L25/00H01L25/075H01L21/50H01L33/00H01L33/48H01L33/62H01L33/64
CPCH01L2224/49107H01L2224/48091H01L2224/73265H01L2224/45147H01L2224/32145H01L2224/45124H01L2224/45144H01L2224/48145H01L2924/01015
Inventor 吴纬国
Owner NANKER GUANGZHOU SEMICON MFG
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