Integrated circuit with memory cells comprising a programmable resistor and method for addressing memory cells comprising a programmable resistor

Abstract

A module comprises a bus invert encoder (24) for determining whether a set of data bits should be inverted prior to transmission over a communication bus. The bus invert encoder (24) produces a bus invert signal BI which controls a selective inversion means (28), for example a multiplexer. A partial fault detection encoder (32) determines one or more temporary check bits from the set of data bits, substantially in parallel with the bus invert encoder (24). Thus, the one or more temporary check bits are determined based on the assumption that the set of data bits are to be transmitted without inversion from the selective inversion means (28). A logic unit (34) is provided for correcting the one or more temporary check bits, if necessary, based on the bus invert signal produced by the bus invert encoder (24). The module has the e advantage of enabling the temporary check bits to be determined in parallel with the bus invert encoding, thereby reducing latency, with the logic unit being used to correct the check bits, if necessary, prior to transmission over the communication bus.

Description

technical field [0001] The invention relates to an integrated circuit containing a memory cell comprising a programmable resistor and a method for accessing a memory cell comprising a programmable resistor. Background technique [0002] A new type of semiconductor storage device based on the use of so-called phase-change materials as data storage means, that is, phase-change memory, could become the next generation of non-volatile memory. These phase change memories explore reversible changes in the crystal structure of chalcogenide alloys. [0003] Typically, a phase change memory comprises an array of constituent cells, where each cell contains a phase change material for storing data. By incorporating chalcogenide alloys into integrated circuits, such cells can be used as fast-switching programmable resistors. Specifically, this phase change memory cell includes a series arrangement of a resistor made of phase change material and some kind of selection device. Phase ch...

AI Technical Summary

Problems solved by technology

[0010] However using normal sized (N)MOS transistors does not provide enough power per transistor size which would be applied to programmable phase change resistors

Therefore, the (N)MOS transistor size has to be increased to deliver the required power

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