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Preparation method for multi-element compounds semiconductor single-crystal and growth device thereof

A growth device and compound technology, which is applied in the field of growth device and melt method to grow multiple compound semiconductor single crystals, can solve the problems of large difference in thermal conductivity between solid and melt, large viscosity coefficient of melt, and large difference in melting point, etc., to achieve Achieve flat interface growth, stable solid-liquid interface, and good crystallization performance

Inactive Publication Date: 2009-12-02
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above-mentioned compound semiconductor single crystal growth is difficult, and the Brigdman-Stockarger (B-S method for short) method can generally be used to grow single crystals. However, these compounds have many components, large differences in melting points, large differences in saturated vapor pressure, and are easy to decompose at high temperatures. In addition, the melt is viscous. If the coefficient is large, the second phase will also be precipitated and separated at low temperature; especially during the crystallization process, due to the different segregation coefficients of the constituent substances of the compound, and the large difference in thermal conductivity between the solid and the melt, as the crystal The change of solid-liquid amount during the growth process will change the temperature field in the crystallization area, causing the solid-liquid interface to drift, and it is difficult to maintain the flat (or slightly convex) interface growth required for crystal growth. Therefore, the usual B-S It is difficult to obtain compound semiconductor single crystals with good integrity, which restricts the wide application of its devices

Method used

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  • Preparation method for multi-element compounds semiconductor single-crystal and growth device thereof
  • Preparation method for multi-element compounds semiconductor single-crystal and growth device thereof
  • Preparation method for multi-element compounds semiconductor single-crystal and growth device thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Example 1: Multi-component compound semiconductor single crystal growth device

[0031] In this embodiment, the structure of the multiple compound semiconductor single crystal growth device is as follows figure 1 As shown, it includes a furnace body 1, an upper furnace heater for independent heating and temperature control, an auxiliary heater, a lower furnace heater, an upper furnace temperature monitor, a lower heat conduction ring 9, a middle heat conduction ring 8, and an upper heat insulation ring 6 , lower lifting mechanism 12, upper lifting mechanism 13.

[0032] The heating element 2 of the upper furnace heater and the heating element 5 of the auxiliary heater are sequentially installed on the furnace body from top to bottom along the axial direction of the furnace body, and the heating assembly 11 of the lower furnace heater is installed on the lower lifting mechanism 12, Its main body extends into the furnace body and is located under the heating element of t...

Embodiment 2

[0036] Example 2: AgGaS 2 Preparation of single crystals

[0037] In this example, AgGaS 2 Polycrystalline powder is a raw material, with a quartz crucible as a growth vessel, using the crystal growth device described in Example 1, in this device, the auxiliary heater heating body distribution area 1 2 The length is 12cm. The preparation method comprises the following process steps in turn:

[0038] ①Clean the crucible

[0039] Cleaning the crucible adopts a combination of comprehensive cleaning and vacuum baking. First, soak and rinse the inner wall of the crucible with tap water, then inject hydrofluoric acid washing solution and soak for 3 minutes, then rinse with tap water until neutral, and finally place it in an ultrasonic cleaning tank for oscillation Wash for 8 minutes and rinse repeatedly with high-resistance deionized water, place the cleaned crucible in a vacuum oven, control the temperature at 130°C, and bake for 3.5 hours;

[0040] ② Loading and degassing and...

Embodiment 3

[0048] Example 3: CdGeAs 2 Preparation of single crystals

[0049] In this example, CdGeAs 2 Polycrystalline powder is a raw material, with a quartz crucible as a growth vessel, using the crystal growth device described in Example 1, in this device, the auxiliary heater heating body distribution area 1 2 The length is 8cm. The preparation method comprises the following process steps in turn:

[0050] ①Clean the crucible

[0051] Cleaning the crucible adopts a combination of comprehensive cleaning and vacuum baking. First, soak and rinse the inner wall of the crucible with tap water, then inject hydrofluoric acid washing solution and soak for 3 minutes, then rinse with tap water until neutral, and finally place it in an ultrasonic cleaning tank for oscillation Wash for 8 minutes and rinse repeatedly with high-resistance deionized water, place the cleaned ampoule in a vacuum oven with the temperature controlled at 130°C, and the baking time is 3.5 hours;

[0052] ② Loading ...

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Abstract

The invention relates to a method of preparing a diversified chemical semi-conductive single crystal, which includes the following technological procedures: (1) cleaning of crucible (2)Loading, air elimination and blocking (3)growth of crystal (4)annealing and cooling. A single crystal growing device of the method contains a lower furnace heater capable of moving and a single crystal growing furnace containing an auxiliary heater at the middle part; the device can flexibly regulate the temperature field of a crystal temperature gradient zone, so as to realize a narrow temperature zone necessary for the chemical single crystal growth and large temperature gradient crystallization temperature field division, maintain stability of the solid-liquid interfaces and realize the plane interface growth of the single crystal. With the growing device, a plurality of diversified chemical semi-conductive single crystals with complete appearance and good crystallizing performance can be successfully grown with the Bridgman method.

Description

technical field [0001] The invention belongs to the field of preparation of inorganic single crystal materials, and in particular relates to a method for growing multiple compound semiconductor single crystals by a melt method and a corresponding growth device. Background technique [0002] Multi-component compound semiconductor single crystal, such as ZnGeP 2 , CdGeAs 2 , AgGaS 2 , AgGaSe 2 , AgGa 1-x In x Se 2 、Cd 1-x Zn x Te et al., because of their excellent infrared nonlinear optical properties or room temperature nuclear radiation detection performance, they can be widely used in the field of frequency conversion in the mid-to-far infrared band and room temperature nuclear radiation detection. The above-mentioned compound semiconductor single crystal growth is difficult, and the Brigdman-Stockarger (B-S method for short) method can generally be used to grow single crystals. However, these compounds have many components, large differences in melting points, larg...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00
Inventor 朱世富赵北君何知宇陈观雄
Owner SICHUAN UNIV
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