Construction for enhancing reliability of phase-change memory storage unit and manufacturing method thereof
A technology of phase-change memory and storage unit, which is applied in the direction of static memory, read-only memory, digital memory information, etc., and can solve problems that affect device performance and reliability, difficulty in distinguishing resistance values, and large contact resistance
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Embodiment 1
[0036] (1) Prepare a 200nm thick Al film on the substrate as the bottom electrode, and prepare a 350nm thick SiO on the bottom electrode Al film by electron beam evaporation 2 , in SiO 2 The nanoholes are prepared by electron beam etching method, the bottom of the hole is connected with the bottom electrode, the diameter of the hole is 200nm, and the W film is deposited in the hole by PVD technology until the hole is filled;
[0037] (2) Use CMP technology to throw away W in the area outside the pores to form SiO 2 A structure in which a columnar W heating electrode is embedded in the medium; ( figure 2 )
[0038] (3) Using W and SiO 2 Different etching rates of the medium, using RIE to etch the top of the W heating electrode to 200nm, thereby forming a dielectric hole at the top of the W heating electrode; ( image 3 )
[0039] (4) Use ALD technology to fill the buffer material TiN in the dielectric hole at the top of the W heating electrode, and polish the TiN outside ...
Embodiment 2
[0045] Replace the heating electrode W in Example 1 with WTiN, prepare a columnar WTiN in the dielectric hole in the first step of Example 1 as the heating electrode, and then etch a part of the top of the WTiN to form a dielectric hole, and then fill the phase change material. Other follow-up The process steps are the same as in Example 1, and similar properties can be obtained, but the process steps are more simplified.
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