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Construction for enhancing reliability of phase-change memory storage unit and manufacturing method thereof

A technology of phase-change memory and storage unit, which is applied in the direction of static memory, read-only memory, digital memory information, etc., and can solve problems that affect device performance and reliability, difficulty in distinguishing resistance values, and large contact resistance

Active Publication Date: 2009-10-28
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The key problems of this structure are mainly: (1) The mechanical and electrical matching between the columnar heating electrode and the phase change material. Usually the phase change material is relatively soft, and the hardness of the heating electrode material is relatively large, so that the heating electrode is on the phase change material. Cracks are prone to occur; in addition, the electrical contact between the heating electrode material and the phase change material is usually not a normal ohmic type, there is a Schottky barrier, and the contact resistance is too large. If the contact resistance reaches 10 3 It is difficult to distinguish the resistance value of the phase change material in the polycrystalline state above the ohm
(2) The heat dissipation of the top electrode is too large, resulting in a large power consumption of the device during the erasing process
(3) The reversible phase change region in the phase change material will expand during repeated erasing and writing, which will affect the performance and reliability of the device

Method used

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  • Construction for enhancing reliability of phase-change memory storage unit and manufacturing method thereof
  • Construction for enhancing reliability of phase-change memory storage unit and manufacturing method thereof
  • Construction for enhancing reliability of phase-change memory storage unit and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0036] (1) Prepare a 200nm thick Al film on the substrate as the bottom electrode, and prepare a 350nm thick SiO on the bottom electrode Al film by electron beam evaporation 2 , in SiO 2 The nanoholes are prepared by electron beam etching method, the bottom of the hole is connected with the bottom electrode, the diameter of the hole is 200nm, and the W film is deposited in the hole by PVD technology until the hole is filled;

[0037] (2) Use CMP technology to throw away W in the area outside the pores to form SiO 2 A structure in which a columnar W heating electrode is embedded in the medium; ( figure 2 )

[0038] (3) Using W and SiO 2 Different etching rates of the medium, using RIE to etch the top of the W heating electrode to 200nm, thereby forming a dielectric hole at the top of the W heating electrode; ( image 3 )

[0039] (4) Use ALD technology to fill the buffer material TiN in the dielectric hole at the top of the W heating electrode, and polish the TiN outside ...

Embodiment 2

[0045] Replace the heating electrode W in Example 1 with WTiN, prepare a columnar WTiN in the dielectric hole in the first step of Example 1 as the heating electrode, and then etch a part of the top of the WTiN to form a dielectric hole, and then fill the phase change material. Other follow-up The process steps are the same as in Example 1, and similar properties can be obtained, but the process steps are more simplified.

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Abstract

The invention relates to a structure for improving the reliability of a storage unit of a phase-change memory and a manufacturing method thereof, which is characterized in that a thin layer of buffer material is added between a nano-heating electrode and a columnar phase-change material with the same diameter to strengthen the phase-change material and the phase-change material. The adhesion and interface matching between heating electrodes can improve the electrical matching between phase change materials and heating electrodes at the same time, forming a good ohmic contact. In addition, a thin layer of thermal resistance material is added between the phase change material and the item electrode to improve the thermal balance of the device during erasing and writing, reduce the heat dissipation of the upper electrode, and reduce the power consumption of the device. The memory unit structure prevents the diffusion between the phase change material and the heating electrode and the interface failure in the process of repeated erasing and writing, and enhances the reliability of the device. The heating electrode, the buffer material and the phase change region are confined in the same dielectric hole to form a self-aligned columnar structure, which does not require an insulating layer around the phase change material, reducing the number of process steps.

Description

technical field [0001] The invention relates to a structure for improving the reliability of a storage unit of a phase-change memory and a manufacturing method thereof, belonging to the field of nanometer devices and preparation techniques in microelectronics. Background technique [0002] At present, there is no ideal high-capacity low-cost of dynamic random access memory (DRAM), high speed of static random access memory (SRAM), non-volatile data of flash memory (FLASH), and simultaneous Memory with high reliability, low operating voltage, and low power consumption, and these characteristics are exactly the storage technologies required by the new generation of consumer electronics industry, computer industry and other fields. Phase-change memory (PCRAM) has the advantages of small memory cell size, non-volatility, long cycle life, good stability, low power consumption, and strong embeddability, especially in terms of device feature size reduction. It is believed that in t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/24G11C11/56G11C16/02
Inventor 吴良才宋志棠饶峰封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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