Deep UV projection photoetching objective lens

Abstract

The deep ultraviolet projection lithography objective lens includes a constant temperature sealed outer layer, a middle layer and an inner layer structure. The middle layer is a lens barrel, which is formed by connecting the first lens barrel and the second lens barrel with connectors, and the inner layer is ten. Optical lens elements and ten lens frame components that separate and fix the optical lens elements. The optical system composed of ten optical lens elements is a bi-telecentric system, and a resolution enhancement component is arranged between the ten optical lens elements in the inner layer. The power enhancement component divides ten optical lens elements into front and rear objective lenses. The image focal plane of the group objective lens is also the object focal plane of the rear group objective lens, and also the pupil plane of the optical system. The invention has the ability to enhance the resolution, overcomes the deficiency that the lithography resolution of the existing projection lithography objective lens can only realize the traditional optical limit resolution, and also has the advantages of simple structure, low cost, large optical reduction magnification, and greatly reduces the production of ultra-fine The characteristics of mask difficulty enable it to produce finer graphics with higher resolution.

Description

Technical field [0001] The invention relates to a deep ultraviolet projection lithography objective lens, which belongs to the technical field of high-resolution projection lithography objective lenses of projection lithography devices. Background technique [0002] The projection lithography device is an extremely important device in the key equipment of the large-scale integrated circuit manufacturing process. The projection lithography objective lens is the core component of the projection lithography device. At present, the operating wavelengths of domestic lithography objectives are 436 nm, 365 nm, 248 nm, and 193 nm, etc., and the numerical aperture is not very high, and the highest resolution is 0.15-0.5 microns. Due to the low resolution, high-resolution graphics cannot be produced, which can no longer meet the needs of large-scale integrated circuit manufacturing and research. The deep ultraviolet projection lithography objective lens is the core component of the ...

AI Technical Summary

Problems solved by technology

The existing deep ultraviolet (193nm) projection lithography objective lenses disclosed by companies such as Nikon, Canon, Zeiss, Tropel, etc., have numerical apertures greater than or equal to 0.50-0.60, and can resolve The power is also very high; but these objective lenses are complex in structure and expensive, and cannot be manufactured by general units, nor can they afford it. At the same time, due to the small optical reduction magnification, it is difficult to make ultra-fine masks

In the existing projection lithography objective lens, there are no various new resolution enhancement devices such as light addition and subtraction, phase matching and polarization superposition, and only have the traditional optical limit resolution.

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