Preparation of metal silicon nitride films via cyclic deposition

A deposition method and nitride technology, applied in metal material coating process, household appliances, gaseous chemical plating, etc., to achieve the effect of increasing wafer yield

Inactive Publication Date: 2009-09-09
VERSUM MATERIALS US LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Currently in ternary thin film formation, metal amide, silane and ammonia are sequentially deposited on the substrate by cyclic deposition, but this method causes handling problems
Silane is a pyrophoric gas that poses a potential safety hazard

Method used

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  • Preparation of metal silicon nitride films via cyclic deposition
  • Preparation of metal silicon nitride films via cyclic deposition
  • Preparation of metal silicon nitride films via cyclic deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] TiSiN Thin Films Deposited by TDMAT and BTBAS at 200℃

[0078] The silicon wafer was placed in the deposition chamber and maintained at a temperature of 200°C and a pressure of 200 Pa (1.5 Torr). 2.6 micromoles of the titanium-containing compound, tetrakis(dimethylamino)titanium (TDMAT), was introduced into the deposition chamber along with 100 sccm of nitrogen gas in 10 second pulses. After titanium amide deposition, use 2000 sccm N 2 Unreacted titanium amides and by-products were purged for 7.5 seconds. Then, 4.73 micromoles of the silicon-containing compound, bis(tert-butylamino)silane (BTBAS), were introduced together with 100 sccm of nitrogen over 80 seconds. Unreacted BTBAS and by-products were purged with 2000 seem nitrogen for 40 seconds.

[0079] The above cycle was repeated 200 times (4 steps), resulting in a 45 angstrom thick layer. The deposition rate per cycle is 0.22 angstroms, which is much lower than that of the general ALD method, indicating that th...

Embodiment 2

[0081] Formation of TiSiN thin films by TDMAT and BTBAS using ALD method at 250 °C

[0082] The operation of Example 1 was followed, except that the wafer was placed at a temperature of 250° C. and a pressure of 200 Pa (1.5 Torr). 2.6 micromoles of a titanium-containing compound, tetrakis(dimethylamino)titanium (TD MAT), was introduced into the deposition chamber for 10 seconds along with 100 sccm of nitrogen. This is followed by a nitrogen purge of 2000 sccm for 7.5 seconds. Then, 4.73 micromoles of a silicon-containing compound, bis(tert-butylamino)silane (BTBAS), was introduced together with 100 sccm of nitrogen for 80 seconds. This is followed by a nitrogen purge of 2000 sccm for 40 seconds. The above cycle was repeated 100 times (4 steps), resulting in a 144 angstrom thick layer.

[0083] The deposition rate per cycle was 1.44 Angstroms, which falls within the range of typical ALD methods, indicating that this temperature is sufficient to saturate the monolayer surface...

Embodiment 3

[0086] Formation of TiSiN thin films by TDMAT and BTBAS using cyclic CVD method

[0087] The operation of Example 1 was followed, except that the silicon wafer was placed at a temperature of 300° C. and a pressure of 200 Pa (1.5 Torr). 2.6 micromoles of tetrakis(dimethylamino)titanium (TDMAT) was introduced into the deposition chamber for 10 seconds as the titanium-containing compound along with 100 sccm of nitrogen gas. This is followed by a nitrogen purge of 2000 sccm for 7.5 seconds. Then, 4.73 micromoles of a silicon-containing compound, bis(tert-butylamino)silane (BTBAS), was introduced together with 100 sccm of nitrogen for 80 seconds. This is followed by a nitrogen purge of 2000 sccm for 40 seconds. The above cycle was repeated 100 times (4 steps), resulting in a 629 Angstrom thick layer. The deposition rate per cycle was 6.29 Angstroms, indicating that the temperature was too high to limit the deposition of a single layer per cycle. In contrast to Examples 1 and 2,...

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Abstract

This invention relates to an improved process for producing ternary metal silicon nitride films by the cyclic deposition of the precursors. The improvement resides in the use of a metal amide and a silicon source having both NH and SiH functionality as the precursors leading to the formation of such metal-SiN films. The precursors are applied sequentially via cyclic deposition onto the surface of a substrate. Exemplary silicon sources are monoalkylamino silanes and hydrazinosilanes represented by the formulas: €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ (R 1 NH) n SiR 2 m H 4-n-m (n=1,2; m=0,1,2; n+m =<3); and €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ (R 3 2 N-NH) x SiR 4 y H 4-x-y (x=1,2; y=0,1,2; x+y=<3) wherein in the above formula R 1-4 are same or different and independently selected from the group consisting of alkyl, vinyl, allyl, phenyl, cyclic alkyl, fluoroalkyl, silylalkyls.

Description

technical field [0001] The present invention relates to an improved method of producing ternary metal silicon nitride thin films by cycling deposition precursors. The improvement is to use metal amide and a silicon source with NH and SiH functional groups as precursors to form the above-mentioned metal-SiN thin film. The precursors are sequentially applied to the surface of the substrate by cyclic deposition. Background technique [0002] Metal silicon nitride films are known and they have been used in the semiconductor industry to form diffusion barriers for interconnects and as gate electrodes. Aluminum has traditionally been used as an interconnect in semiconductor devices, but recently, copper has been used for integration due to its lower resistance and better electromigration lifetime compared to aluminum. However, copper is very mobile in many materials used to fabricate semiconductor devices and can diffuse rapidly through certain materials including dielectrics. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/448C23C16/52C23C16/34
CPCC23C16/45553C23C16/34C23C16/45531H01L21/28568H01L21/318C23C16/345H01L21/28562H01L21/02205H01L21/02219H01L21/02142H01L21/02216H01L21/0228H01L21/0215H01L21/02153A47G33/00F21V21/06A47G2200/08H01L21/0234
Inventor 雷新建H·思里丹达姆K·S·库思尔A·K·霍奇伯格
Owner VERSUM MATERIALS US LLC
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