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A method for preparing hexangular ordered FePt nanometer particle arrays

A nanoparticle array and array technology, applied in the manufacture of inductors/transformers/magnets, electrical components, circuits, etc., can solve the problem of not preparing bimetallic nanoparticle arrays, and achieve easy control of particle size and spacing, and good thermal stability , evenly distributed effect

Inactive Publication Date: 2009-03-04
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Various single-metal nanoparticle arrays, such as Au, Fe, Co, etc., have been prepared on various smooth substrates by using the characteristics of block copolymers, but there is no PS-b-P2VP reverse micelle method to prepare double-metal nanoparticle arrays. Report on Metal (or Multimetal) Nanoparticle Arrays

Method used

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  • A method for preparing hexangular ordered FePt nanometer particle arrays
  • A method for preparing hexangular ordered FePt nanometer particle arrays
  • A method for preparing hexangular ordered FePt nanometer particle arrays

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Embodiment

[0051] Such as figure 2 as shown, figure 2 According to the embodiment of the present invention, it is a schematic diagram of the process flow for preparing a hexagonal ordered FePt nanoparticle array, which specifically includes the following steps:

[0052] 1) Add 5 mg of amphiphilic block copolymer PS(1760)-block-P2VP(700) into 5 mL of toluene. After sufficient stirring (more than 24 hours), the copolymer will self-assemble into uniformly sized, monodisperse reverse micelles in toluene.

[0053] 2) Add metal salt 2.77mgFeCl to the above reverse micellar solution 3 and 8.52mgH 2 PtCl 6 , after fully stirring, the metal salt will occupy the inner core of the reverse micelles to form metal salt-loaded reverse micelles.

[0054] 3) Immerse the cleaned and dried (100) silicon substrate vertically into the above-mentioned reverse micelles solution at a certain rate, and pull it out vertically at a constant and controllable rate of 12 mm / min, and a layer will be obtained on...

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Abstract

The process of preparing ordered hexagonal nanometer FePt particle array includes the following steps: 1. self-assembling inverse micelle with amphiphilic block copolymer PS-block-P2VP intoluene; 2. adding metal salts FeCl3 and H2PtCl6 into the inverse micelle solution through stirring for the metal salts FeCl3 and H2PtCl6 to be combined with the P2VP kernel of the inverse micelle to form inverse micelle with supported metal salts; 3. depositing the inverse micelle with supported metal salts onto smooth monocrystalline substrate through dip coating to obtain ordered hexagonal inverse micelle array; and 4. oxygen plasma etching to eliminate copolymer substrate and reduce metal salt into simple substance so as to obtain homogeneous ordered hexagonal nanometer FePt particle array on the monocrystalline substrate.

Description

technical field [0001] The invention relates to the technical field of preparation of ultra-high-density magnetic storage materials, in particular to a method for preparing a hexagonal ordered iron-platinum alloy (FePt) nanoparticle array by using an amphiphilic block copolymer reverse micelle method. Background technique [0002] FePt alloy nanoparticles have high magnetocrystalline anisotropy (6.6~10×10 7 erg / cm 3 ), can overcome superparamagnetism and exhibit excellent stability in the scale of several nanometers. Thanks to this excellent stability, it can have very important applications in ultra-high-density data storage, permanent magnetic nano-films, and medicine and biology. It is the most likely to achieve a storage area density of 1Tb / in. 2 The above magnetic metal materials. [0003] This high magnetocrystalline anisotropy energy is mainly derived from the spin-orbit coupling between Fe and Pt and the hybridization between Fe 3d and Pt 5d electronic states. Th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C1/00C22C38/00C22C5/04B22F9/00H01F41/02
Inventor 屈盛张兴旺陈诺夫
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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