Fin-shaped field-effect transistor with concrete contact window and making method

Abstract

The field-effect transistor (TET) includes fin type channel, source electrode, drain electrode, solid contact window, gate dielectric layer (DL), and gate electrode. Source and drain electrodes are connected to two ends of the fin type channel. Being positioned at one side of fin channel, solid contact window through wire connect the channel. Gate dielectric layer covers surface of fin channel. Being positioned at the other side of fin channel, gate electrode crosses over the channel. Method for preparing TET includes steps: forming insulating layer and semiconductor layer, patterning semiconductor layer to form T channel; at same time, forming source and drain electrodes, and solid contact window at three end points of T channel; forming gate DL, and forming conducting layer; patterning the conducting layer in order to form gate electrode crossing over lateral channel of the T channel; gate electrode and solid contact window are located at two sides of lateral channel.

Description

technical field [0001] The present invention relates to a semiconductor element, and in particular to a fin field effect transistor with a body contact window and a manufacturing method thereof. Background technique [0002] Since the development of integrated circuits in the 1960s, their component density has increased dramatically. While the component density of integrated circuits is increasing, the size of the components is also continuously shrinking. In particular, the thickness of the gate electrode and the length of the channel between the source and drain electrodes have required dimensions ranging from micrometers to nanometers. In the process of shrinking the size of components, the operating characteristics, reliability, and durability of components, as well as the reliability and cost of component manufacturing, have always been important issues. [0003] In the process of component miniaturization, several problems have also arisen, including short channel ef...

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Problems solved by technology

However, the structural design of the above-mentioned fin-shaped channel also makes it a silicon on insulating layer (silicon insulator; SOI) structure, and becomes a floating body (floating body) state, and its voltage cannot be controlled.

[0008] It can be seen that the above-mentioned existing fin field effect transistor and its manufacturing method obviously still have inconvenience and defects in structure, manufacturing method and use, and need to be further improved urgently.

In order to solve the problems existing in fin field effect transistors and their manufacturing methods, relevant manufacturers have tried their best to find a solution, but for a long time no suitable design has been developed, and there is no suitable general product and method. The structure and manufacturing method can solve the above problems, which is obviously a problem that the relevant industry is eager to solve

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