STI channel filling method

Abstract

The method for filling in STI groove includes steps: forming groove on substrate placed inside reaction chamber in advance; using chemical vapor deposition (CVD) technique including sputtering technique in groove inside chamber to fill silicon oxide; reacting gas utilized including oxygen and silicane for CVD technique as well as hydrogen and helium gases for sputtering technique; continuing to let oxygen into reaction chamber, carrying out plasma process for oxygen, and using oxygen plasma in high density to remove fine particles of silicon residual in silicon oxide. Thus, the invention raises quality of fill film.

Description

technical field [0001] The present invention relates to semiconductor technology, particularly to a kind of trench filling (Gap-filling) silicon oxide (SiO 2 )Methods. Background technique [0002] As the semiconductor technology enters the deep submicron era, components below 0.18 μm, such as the active isolation layer of the MOS circuit, have mostly been fabricated by the Shallow Trench Isolation (STI) process. In this process, shallow trenches are first formed on the substrate, and the elements are separated by etched shallow trenches, and then dielectrics are filled in the shallow trenches by chemical vapor deposition (CVD), such as Silicon oxide, after sidewall oxidation and dielectric filling, the wafer surface is planarized by chemical mechanical polishing (CMP). [0003] Since the aspect ratio AR of the shallow trench of the deep submicron device is relatively high, high-density plasma chemical vapor deposition (High-Density-Plasma CVD, HDP-CVD) is generally used t...

AI Technical Summary

Problems solved by technology

However, if the H during the HDP-CVD process 2 , O 2 and SiH 4 If the content ratio is not appropriate, excess silicon particles will be produced during the deposition process

These excess silicon particles stay in the STI-filled silicon oxide film, which not only causes leakage current, but also causes scratches and voids during the CMP (Chemical Mechanical Polishing) process, further aggravating the leakage current in the insulating isolation layer generation, reducing the performance of the STI insulating isolation filling layer

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