Method for manufacturing a solid-state image sensing device, such as a ccd
A technology of solid-state imaging element and manufacturing method, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., and can solve problems such as inability to reproduce colors
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[0018] 1 to 3 are cross-sectional views showing the sequence of steps of the first embodiment of the method for manufacturing a solid-state imaging device according to the present invention. This embodiment is constituted by a light receiving element forming step, an infrared cut filter lamination step, and a dicing step.
[0019] First, in the light-receiving element forming step, as shown in FIG. 1 , a light-receiving element is formed in each region 1a divided by scribe lines on the surface of the semiconductor substrate 1 . The color filter 2 is stacked so as to cover the formation region 1 a of the light receiving element. The semiconductor substrate 1 can be made of common semiconductor materials such as silicon and gallium arsenide. For example, an integrated circuit of a CCD as a light receiving element can be formed by a well-known semiconductor process.
[0020] In the infrared cut filter lamination step, as shown in FIG. 2 , the infrared cut filter is bonded and fi...
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