Methods for growing semiconductors and devices thereof from the alloy semiconductor GaInNAs

Abstract

A method is disclosed for growing a nitrogen-containing Ill-V alloy semiconductor on a semiconductor substrate such as GaAs, which is formed by MOCVD method using nitrogen containing organic compounds having relatively low dissociation temperatures. The alloy semiconductor has a high nitrogen content which exceeds the contents previously achieved, and has a high photoluminescence intensity.There are also disclosed fabrications of semiconductor devices comprising the alloy semiconductors, such as heterostructure and homo-junction light emitting devices.

Description

CROSS-REFERENCE TO RELATED APPLICATION [0001]This reissue application, filed Jun. 24, 2003, is a continuation of co-pending reissue application Ser. No. 09 / 860,369. This application and reissue application Ser. No. 09 / 860,369 each seeks reissue of U.S. Pat. No. 5,904,549, issued May 18, 1999 based on U.S. application Ser. No. 08 / 834,959, filed Apr. 7, 1997.<?insert-end id="INS-S-00001" ?>BACKGROUND[0002]1. Field of the Invention[0003]This invention relates in general to semiconductors and semiconductor devices and more particularly, to methods for growing nitrogen-containing alloy semiconductors and semiconductor devices such as semiconductor lasers and light emitting diodes comprising the alloy semiconductors.[0004]2. Description of the Related Art[0005]Compound semiconductors in general and nitrogen-containing III-V alloy semiconductors in particular have recently received considerable attention as a group of new semiconductor materials.[0006]As an example of methods for gro...

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Benefits of technology

[0022]According to yet another aspect of the invention, there is provided a method for growing nitrogen-containing III-V alloy semiconductors, using nitrogen-containing organic compounds as source materials for nitrogen, such as dimethylhydrazine (DMHy) and tertiary butyl amine (TBA), which have improved properties such as low dissociation temperatures and high vapor pressures, thereby leading to growths of alloy semiconductors of excellent quality for the use of light emitting devices.

[0024]By the use of organic materials which contain nitrogen and have a relatively low dissociation temperatures, as the source materials for nitrogen, nitrogen-containing III-V alloy semiconductors can be grown. The alloy semiconductors have a high nitrogen content which exceeds the contents previously achieved by conventional methods, and have excellent crystalline quality and a high photoluminescence efficiency, indicative of promising characteristics for light emitting devices, as well as photodetecting devices.

Problems solved by technology

As aforementioned, that has been previously conceived not feasible by the devices fabricated on GaAs substrates.

However, the use of NH3 is not completely satisfactory, since temperatures for alloy semiconductor growth have to be relatively high because of a relatively high dissociation temperature of NH3 and an unduly desorption of arsenic results at such temperatures.

This causes difficulties in obtaining nitrogen-containing III-V alloy semiconductors with a large concentration of nitrogen.

This results in an undesirable increase in concentrations of arsenic vacancies and makes it difficult to grow nitrogen-containing III-V alloy semiconductor of satisfying quality.

As a result, these methods are not able to provide nitrogen-containing alloy semiconductors of excellent quality.

Because of a decreased AsH3 partial pressure, a metal-rich alloy semiconductor is obtained similarly to the above example and even under the condition of an increased nitrogen flow rate, it is difficult to increase the nitrogen content and this method also is not be able to provide nitrogen-containing alloy semiconductors of excellent quality.

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