Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor assembly having t-shaped interconnection and method of manufacturing the same

Active Publication Date: 2021-09-16
NAN YA TECH
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The semiconductor assembly described in this patent text increases the size of the exposed conductive plug, making it easier to attach a bump to the plug. The technical effect is to improve the bonding process of the semiconductor assembly.

Problems solved by technology

However, due to the reduced size of the component, the contact area between conductive pads of the integrated components and bumps is decreased, such that delamination of the bumps and the conductive pad may easily occur, thereby adversely affecting the electrical performance and reliability of the semiconductor device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor assembly having t-shaped interconnection and method of manufacturing the same
  • Semiconductor assembly having t-shaped interconnection and method of manufacturing the same
  • Semiconductor assembly having t-shaped interconnection and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032]Embodiments, or examples, of the disclosure illustrated in the drawings are now described using specific language. It shall be understood that no limitation of the scope of the disclosure is hereby intended. Any alteration or modification of the described embodiments, and any further applications of principles described in this document, are to be considered as normally occurring to one of ordinary skill in the art to which the disclosure relates. Reference numerals may be repeated throughout the embodiments, but this does not necessarily mean that feature(s) of one embodiment apply to another embodiment, even if they share the same reference numeral.

[0033]It shall be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers or sections, these elements, components, regions, layers or sections are not limited by these terms. Rather, these terms are merely used to distinguish one element, component...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present disclosure provides a semiconductor assembly and method of manufacturing the same. The semiconductor assembly includes a semiconductor device, a bulk semiconductor, a passivation layer, at least one conductive plug, a plurality of protective liners, and a plurality of isolation liners. The bulk semiconductor is disposed over the semiconductor device. The passivation layer covers the bulk semiconductor. The conductive plug comprises a first block disposed in the passivation layer and a second block disposed between the first block and the conductive pad, wherein portions of peripheries of the first and second blocks of the conductive plug are surrounded by the protective liners and the isolation liners.

Description

TECHNICAL FIELD[0001]The present disclosure relates to a semiconductor assembly and a method of manufacturing the same, and more particularly to a semiconductor assembly having T-shaped interconnection and a method of manufacturing the same.DISCUSSION OF THE BACKGROUND[0002]Since the invention of integrated circuits, the semiconductor industry has experienced continuous rapid growth due to constant improvement in the integration density of various electronic components (i.e., transistors, diodes, resistors, capacitors, etc.). For the most part, this improvement in integration density has come from repeated reductions in minimum feature size, allowing more components to be integrated into a given chip area.[0003]These integration improvements are essentially two-dimensional (2D) in nature, in that the volume occupied by the integrated components is essentially on the surface of the semiconductor wafer. Dramatic improvements in lithography have resulted in considerable improvements in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/528H01L23/538H01L23/28
CPCH01L23/528H01L23/28H01L23/538H01L23/481H01L21/76898H01L24/13H01L21/76844H01L2224/16225H01L2224/0401H01L2224/05567H01L2224/13025H01L2224/13023H01L2224/02126H01L2224/1147H01L2224/11334H01L2224/11849H01L2224/03828H01L24/03H01L24/11H01L24/05H01L2224/05547H01L2224/0345H01L2224/03452H01L2224/03616H01L2924/00014
Inventor SHIH, SHING-YIH
Owner NAN YA TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com