Self repair device and method thereof

Abstract

A self repair device may include: an electrical fuse array configured to store bit information of a failed address in a fuse; an electrical fuse controller configured to store a row address or column address corresponding to a failed bit when a failure occurs, generate a repair address by comparing a failed address inputted during a test to the address stored therein, output a rupture enable signal for controlling a rupture operation of the electrical fuse array, and output row fuse set data or column fuse set data in response to the failed address; and a row / column redundancy unit configured to perform a row redundancy or column redundancy operation in response to the row fuse set data or the column fuse set data applied from the electrical fuse array.

Description

CROSS-REFERENCES TO RELATED APPLICATION[0001]The present application claims priority under 35 U.S.C. §119(a) to Korean application number 10-2015-0085296 filed on Jun. 16, 2015, in the Korean Intellectual Property Office, which is incorporated herein by reference in its entirety.BACKGROUND[0002]1. Technical Field[0003]Various embodiments generally relate to an integrated circuit, and more particularly to a self repair device and method for improving repair efficiency during a package repair operation.[0004]2. Related Art[0005]A semiconductor memory such as Dynamic Random Access Memory (hereinafter referred to as “DRAM”) includes a plurality of memory cells arranged in a matrix. Demands for highly integrated semiconductor memory devices are leading to a decrease in the design rule, which defines the minimum feature size of chip lithography. The decrease in the design rule may increase the probability of defects in the semiconductor memory devices, and one or more defects in a chip ma...

AI Technical Summary

Benefits of technology

[0016]Various embodiments are directed to a self repair device and method which is capable of selectively applying a row self repair mode and a column self repair mode during a package function test and performing a redundancy operation, thereby improving repair efficiency.

[0020]According to the embodiments, the self repair device and method may select the row or column redundancy according to various types of defects which occur in the package, and optimize the repair operation, thereby contributing to improving the package yield and reducing the yield ramp-up time.

Problems solved by technology

The decrease in the design rule may increase the probability of defects in the semiconductor memory devices, and one or more defects in a chip may cause the chip to be discarded.

Thus, when a column-based defect occurs, the yield may decrease because the column-based defect cannot be repaired.

During a package-level test, a bit failure, a row failure, or a column failure may occur.

A semiconductor package having such failure requires a repair circuit, which leads to an increase in the size of each semiconductor chip.

Thus, the repair circuit may cause a decrease in the net die per wafer.

Thus, a bit failure and a row failure can be repaired, but a column failure cannot be repaired.

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