EXTENDED GATE SENSOR FOR pH SENSING

Abstract

A sensing device includes a substrate having a source region and a drain region formed therein. A gate structure is formed over the substrate and includes a gate dielectric and a gate conductor. The gate conductor is formed on the gate dielectric and disposed between the source region and the drain region. A dielectric layer is formed over the substrate and has a depth configured to form a well over the gate conductor. A gate extension is formed in contact with or as part of the gate conductor and including a conductive material covering one or more surfaces of the well.

Description

BACKGROUND[0001]1. Technical Field[0002]The present invention relates to integrated circuits, and more particularly to field effect transistor based sensing devices having an extended gate structure.[0003]2. Description of the Related Art[0004]The measurement of pH is important in many chemical and bio-chemical reactions. Sensors that measure pH may have multiple applications and in particular may provide measurements in processes, such as, DNA sequencing, enzymatic reactions where protons are produced, e.g., glucose detection, etc.[0005]In many instances, pH sensors are included in integrated circuits. A floating gate field effect transistor (FET) pH sensor may be employed for sequencing DNA. A bead is coated with multiple copies of single DNA strands; nucleotides are flowed into a space or a well above a floating gate. The well includes dielectric walls and a metal oxide dielectric sensing layer. When a polymerization reaction occurs, protons are released into the well thus causin...

AI Technical Summary

Problems solved by technology

The sensing surface is limited by layout area restrictions, and the floating gate design and the pH (i.e., proton concentration) signal is limited based on the available sensing capabilities.

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