Film Forming Method Using Epitaxial Growth and Epitaxial Growth Apparatus

Abstract

When a reaction chamber defined and formed by a ceiling plate as a top face, a substrate mounting portion as a bottom face, and a side wall as a lateral face is constructed, the ceiling plate is supported by a support at the circumferential edge of the ceiling plate from the upper side and the outer side of the circumferential edge, and the reactant gas is rectified in a reactant gas supply path disposed in the side wall so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path facing the reaction chamber to the center of the reaction chamber.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a film forming method using epitaxial growth and an epitaxial growth apparatus.[0003]2. Background Art[0004]At present, as an epitaxial growth apparatus for causing an epitaxial film to grow on a substrate using epitaxial growth, an apparatus including a process chamber and a rotatable substrate support disposed in the process chamber and configured to rotate a substrate about a rotation axis is known in which a reactant gas is introduced to the substrate in a direction parallel to the substrate to form a film on the substrate on the substrate support (for example, see JP-T-2001-520456)[0005]In such an epitaxial growth apparatus, there is currently a need for an increase in growth rate. However, it is not preferable that a large amount of source gas is included in the reactant gas so as to further increase the growth rate, for example, because an increase in the film formation cost or an...

AI Technical Summary

Benefits of technology

The present invention aims to provide a film forming method and an epitaxial growth apparatus that can achieve stable and high growth rate while maintaining film quality with regards to film thickness distribution and resistivity distribution. This is achieved by improving the pre-heating of the substrate using a susceptor ring and controlling the flow direction of the reactant gas through a reactant gas supply path to suppress the growth of a boundary layer and increase the growth rate. As a result, a stable and high growth rate can be achieved while maintaining film quality.

Problems solved by technology

However, it is not preferable that a large amount of source gas is included in the reactant gas so as to further increase the growth rate, for example, because an increase in the film formation cost or an increase in the number of particles is caused.

On the other hand, when the thickness of the boundary layer simply decreases, a flow in which the reactant gas escapes toward the circumferential edge of the substrate on the surface of the substrate is formed and it is thus difficult to adjust a film thickness distribution or a resistivity distribution.

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