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System for providing a substantially uniform potential profile

a potential profile and substantially uniform technology, applied in pulse generators, pulse manipulation, pulse techniques, etc., can solve the problems of poor crystalline qualities of plasma-enhanced cvd, non-uniform deposition rate of standing waves, and non-uniform deposition rate of standing waves, and achieve uniform potential profiles.

Inactive Publication Date: 2010-05-20
RENO SUB-SYST INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0007]Accordingly, the present invention provides a system for providing a substantially uniform potential profile.

Problems solved by technology

Unfortunately, a VHF RF signal creates standing waves when the signal is applied to the relatively large electrodes required for photovoltaic cells and large flat panel displays.
Standing waves produce non-uniform deposition rates and poor crystalline qualities for plasma-enhanced CVD for depositing amorphous and micro-crystalline silicon.

Method used

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  • System for providing a substantially uniform potential profile
  • System for providing a substantially uniform potential profile
  • System for providing a substantially uniform potential profile

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Embodiment Construction

[0027]Referring to FIGS. 1-14, the invention relates to providing a substantially uniform potential profile. Such a substantially uniform potential profile can be applied to a plasma that, for example, is used in the manufacture of semiconductor material. The invention allows the use of very high frequency (VHF) plasma. VHF plasma can be used for semiconductor etching and deposition processes. Using VHF plasma provides deposition rates for materials, such as, amorphous silicon (a:Si), nanocrystalline silicon (nc-Si), and microcrystalline silicon (uc-Si) that are approximately seven to eight times greater than deposition rates using plasma at about 13.56 Mhz. However, VHF plasma develops a non-uniformity over a large surface area, and the non-uniformity of VHF plasma limits its use in semiconductor material fabrication. The invention can minimize the non-uniformity of VHF plasma.

[0028]Referring to FIG. 1, a normalized potential profile at about 13.56 MHz for a center-fed 100 cm×100 c...

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Abstract

A system for providing at least two output signals to produce a substantially uniform potential profile includes a signal generator adapted to emit a frequency at least about 30 megahertz, a splitter in communication with the signal generator, and a signal manipulator in communication with the splitter. The splitter is adapted to split the signal of the signal generator into the two output signals, and the signal manipulator is adapted to manipulate a phase, a gain, or an impedance of the two output signals. The signal manipulator manipulates the two output signals so that the two output signals produce the substantially uniform potential profile.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001]This application claims priority to provisional patent application Ser. No. 61 / 134,385, filed Jul. 9, 2008, and provisional patent application Ser. No. 61 / 209,788, filed Mar. 11, 2009, both of which are incorporated herein by reference in their entirety.FIELD OF THE INVENTION [0002]The present invention relates to system for providing a substantially uniform potential profile. In particular, the present invention relates to a system for providing a substantially uniform potential profile that can be used with plasma.BACKGROUND OF THE INVENTION[0003]Semiconductor materials are utilized in many different applications. Thus, there is a continued need to fabricate semiconductor material quickly and at reduced cost. The fabrication of semiconductor materials often includes a deposition step and an etching step. Deposition encompasses any process that grows, coats, or otherwise transfers material onto another substance, such as a wafer, and et...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H03K5/01H03L5/00H03H11/16H03H7/38
CPCH03H7/18H03H7/38H05H1/46H03H11/28H03K5/15013H03H11/16
Inventor BHUTTA, IMRAN A.IVINS, SCOTT D.
Owner RENO SUB-SYST INC
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