Bulk acoustic wave resonator with controlled thickness region having controlled electromechanical coupling

a resonator and thickness technology, applied in the field of electromechanical coupling of bulk acoustic waves (baw) resonators, can solve the problems of significant energy loss, energy loss in the baw resonator, and lowering the quality factor (q) of the baw resonator

Inactive Publication Date: 2009-10-29
CONTRIA SAN LIABILITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, unwanted excitation of energy in modes of wave propagation that have high energy loss, such as lateral modes, can cause a significant loss of energy in a BAW resonator and, thereby, undesirably lower the BAW resonator's quality factor (Q).
However, the shaped region provided in this conventional approach can also introduce additional unwanted modes, such as lateral modes contained within the shaped region, which can cause energy loss in the BAW resonator.

Method used

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  • Bulk acoustic wave resonator with controlled thickness region having controlled electromechanical coupling
  • Bulk acoustic wave resonator with controlled thickness region having controlled electromechanical coupling
  • Bulk acoustic wave resonator with controlled thickness region having controlled electromechanical coupling

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Embodiment Construction

[0013]The present invention is directed to a bulk acoustic wave resonator with controlled thickness region having controlled electromechanical coupling. The following description contains specific information pertaining to the implementation of the present invention. One skilled in the art will recognize that the present invention may be implemented in a manner different from that specifically discussed in the present application. Moreover, some of the specific details of the invention are not discussed in order not to obscure the invention. The specific details not described in the present application are within the knowledge of a person of ordinary skill in the art.

[0014]The drawings in the present application and their accompanying detailed description are directed to merely exemplary embodiments of the invention. To maintain brevity, other embodiments of the invention which use the principles of the present invention are not specifically described in the present application and ...

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Abstract

According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer situated between upper and lower electrodes, where each of the upper and lower electrodes are a high density metal. The BAW resonator further includes a controlled thickness region including a low density metal segment, where the low density metal segment is situated adjacent to the piezoelectric layer, and where the controlled thickness region has controlled electromechanical coupling. The controlled thickness region can provide reduced electromechanical coupling into lateral modes. The low density metal segment can extend along the perimeter of the BAW resonator.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention generally relates to the field of electronics. More particularly, the invention relates to bulk acoustic wave (BAW) resonators.[0003]2. Background Art[0004]Because of their small footprint, low profile, and high performance, bulk acoustic wave (BAW) filters are increasingly utilized to provide radio frequency (RF) filtering in mobile electronic devices, such as cellular phones, as well as other types of electronic devices. BAW filters can include a number of BAW resonators, where each BAW resonator typically includes a layer of piezoelectric material, such as aluminum nitride, sandwiched between upper and lower electrodes. When an electric field is applied across the upper and lower electrodes of the BAW resonator, the electric field can cause the layer of piezoelectric material to vibrate. As a result, the piezoelectric material can generate a number of allowed modes of acoustic wave propagation, ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L41/047H01L41/22
CPCH03H3/02H03H9/02118Y10T29/42H03H9/172H03H9/0542
Inventor BARBER, BRADLEY P.BI, FRANKCARPENTER, CRAIG E.
Owner CONTRIA SAN LIABILITY
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