Non-volatile memory device and method of fabricating the same

Abstract

Provided are a non-volatile memory device that may be configured in a stacked structure and may be more easily highly integrated, and a method of fabricating the non-volatile memory device. At least one first electrode and at least one second electrode are provided. The at least one second electrode may cross the at least one first electrode. At least one data storage layer may be at an intersection between the at least one first electrode and the at least one second electrode. Any one of the at least one first electrode and the at least one second electrode may include at least one junction diode connected to the at least one data storage layer.

Description

PRIORITY STATEMENT[0001]This application claims priority under U.S.C. §119 to Korean Patent Application No. 10-2008-0035217, filed on Apr. 16, 2008, in the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference.BACKGROUND[0002]1. Field[0003]Example embodiments relate to a semiconductor device, and more particularly, to a non-volatile memory device having a multilayer structure and a method of fabricating the non-volatile memory device.[0004]2. Description of the Related Art[0005]Demands for semiconductor products with smaller volume and higher data processing capacity have increased. To satisfy these demands, the operation speed and the integration degree of non-volatile memory devices used in semiconductor products has to be increased. In this respect, non-volatile memory devices with a multilayer structure, rather than a conventional monolayer structure, are advantageous for higher integration.[0006]When a multilayer structure...

AI Technical Summary

Benefits of technology

[0007]Example embodiments provide a non-volatile memory device applicable for a multilayer structure to have increased integration. Example embodiments also provide an economical method of fabricating the non-volatile memory device.

Problems solved by technology

However, in a non-volatile memory device having a multilayer structure, connecting memory cells in different layers and selecting memory cells from each layer may be difficult.

In addition, in the non-volatile memory device with a multilayer structure, as the number of stacked layers increases, the manufacturing cost may be higher because more manufacturing processes may be required.

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