Semiconductor device and method of manufacturing the same

Abstract

An object of the invention is to provide a semiconductor device which includes a barrier metal having high adhesiveness and diffusion barrier properties and a method of manufacturing the semiconductor device. The invention provides a semiconductor device manufacturing method including forming a first layer made of a material containing silicon on a base substance; forming a second layer containing metal and nitrogen on the first layer; and exposing the second layer to active species obtained from plasma in an atmosphere including reducing gas.

Description

[0001] This application is based on Japanese Patent application NO. 2004-343443, the content of which is incorporated hereinto by reference. BACKGROUND [0002] 1. Technical Field [0003] The present invention relates to a semiconductor device and a method of manufacturing the same, particularly to the semiconductor device which has an insulating interlayer and uses a Cu (copper) interconnect and the method of manufacturing the same. [0004] 2. Related Art [0005] In recent semiconductor devices represented by a 65-nm node generation, delay of signal propagation in an interconnect is known as a rate-controlling factor in device operation. A delay constant at the interconnect is expressed by a product of interconnect resistance and capacitance among the interconnect. Therefore, in order to increase speed of the device operation by decreasing the interconnect resistance and capacitance among the interconnect, a material (hereinafter referred to as “low dielectric constant material”) having...

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Benefits of technology

[0030] Thus, according to the invention, the semiconductor device which includes the barrier metal having the high adhesiveness and diffusion barrier properties and the method of manufacturing the semiconductor device can be provided, and there is generated a large industrial advantage.

Problems solved by technology

In the barrier metal layer 210, it is difficult that compatibility between the diffusion barrier properties and the adhesiveness.

However, because the PVD method has a worse step coverage, a thickness of a side wall portion is decreased when compared with the thickness of a bottom portion in the interconnect trench or the via hole.

However, in the PVD method, it is difficult that the thin film is conformaly formed, so that another technique is required in order to form the barrier metal having the thickness of not more than 10 nm.

However, in the ALD method, since the film formation is performed by the saturation adsorption mechanism, it is easy to stably obtain the given composition and the crystalline film while it is difficult to obtain the different compositions and the crystalline film.

However, because a temperature at which the metallic compound is saturation-adsorbed differs from a temperature at which the silicon compound is saturation-adsorbed, in the methods described in (1) and (2), it is difficult to select the raw material.

Further, in the method described in (3), there is a concern that impurities such as organic materials and halogens and the like remain due to inadequacy of reduction power of SiH4.

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