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Chemical mechanical polishing pad and chemical mechanical polishing method

a technology of mechanical polishing and chemical mechanical, applied in the direction of flexible wheel, manufacturing tools, lapping machines, etc., can solve the problems of unsatisfactory polishing surface state, greatly affected polishing result, and poor polishing rate, and achieve excellent polishing rate and suppress the occurrence of scratches.

Inactive Publication Date: 2005-11-24
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a chemical mechanical polishing pad and a method using it that can fully suppress scratches on polished surfaces and have an excellent polishing rate. The pad has a polishing surface with at least two groups of grooves, including a first group of grooves and a second group of grooves that intersect with each other. The first group of grooves is made up of a single virtual straight line extending from the center portion toward the peripheral portion of the polishing surface, while the second group of grooves intersects the first group of grooves and does not cross one another. The polishing surface also has a single first spiral groove that expands gradually from the center portion toward the peripheral portion of the polishing surface and a second group of grooves that intersect the spiral groove and do not cross one another. The invention also provides a method for polishing surfaces using this chemical mechanical polishing pad.

Problems solved by technology

It is known that the polishing result is greatly affected by the performance characteristic and properties of the polishing pad in this chemical mechanical polishing.
Although the design of a chemical mechanical polishing pad is described in detail in the above patent document 1, the polishing rate and the state of the polished surface are still unsatisfactory.

Method used

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  • Chemical mechanical polishing pad and chemical mechanical polishing method
  • Chemical mechanical polishing pad and chemical mechanical polishing method
  • Chemical mechanical polishing pad and chemical mechanical polishing method

Examples

Experimental program
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Effect test

example 1

(1) Manufacture of Chemical Mechanical Polishing Pad

[0097] 80 parts by volume (equivalent to 72 parts by mass) of 1,2-polybutadiene (manufactured by JSR Corporation, trade name of JSR RB830) which would be crosslinked to become a water-insoluble matrix and 20 parts by volume (equivalent to 28 parts by mass) of β-cyclodextrin (manufactured by Bio Research Corporation of Yokohama, trade name of Dexy Pearl β-100, average particle diameter of 20 μm) as water-soluble particles were kneaded together by an extruder set at 160° C. Thereafter, 1.0 part by volume (equivalent to 1.1 parts by mass) of dicumyl peroxide (manufactured by NOF Corporation, trade name of Percumyl D) was added to and kneaded with the above kneaded product at 120° C. to obtain a pellet. The resulting kneaded product was then heated in a metal mold at 170° C. for 18 minutes to be crosslinked so as to obtain a disk-like molded product having a diameter of 600 mm and a thickness of 2.5 mm. Concentrically circular groove...

example 2

[0105] A chemical mechanical polishing pad was manufactured in the same manner as in Example 1 except that 4 linear grooves (having a width of 1.0 mm and a depth of 1.0 mm) were formed from the center to the peripheral end of the pad as a second group of grooves in such a manner that they were in contact with one another at the center of the polishing surface of the pad and the angle between adjacent linear grooves was 90° and that 28 linear grooves were formed from a portion 25 mm away from the center of the pad to the peripheral end in such a manner that the angle between adjacent linear grooves was 11.25°. The arrangement of the formed grooves is shown in the diagram of FIG. 2. The surface roughness of the inner wall of each of the formed grooves was 3.9 μm.

[0106] The polishing rate and the number of scratches were evaluated in the same manner as in Example 1 except that the above polishing pad was used. As a result, the polishing rate was 220 nm / min and no scratch was observed....

example 3

[0107] 64 parts by volume (equivalent to 58 parts by mass) of 1,2-polybutadiene (manufactured by JSR Corporation, trade name of JSR RB830), 16 parts by volume (equivalent to 14 parts by mass) of a block copolymer of 1,2-polybutadiene and polystyrene (manufactured by JSR Corporation, trade name of TR2827) and 20 parts by volume (equivalent to 28 parts by mass) of β-cyclodextrin (manufactured by of Bio Research Corporation of Yokohama, trade name of Dexy Pearl β-100, average particle diameter of 20 μm) as water-soluble particles were kneaded together by an extruder set at 160° C. Thereafter, 0.5 part by volume (equivalent to 0.56 part by mass) of dicumyl peroxide (manufactured by NOF Corporation, trade name of Percumyl D) was added to and kneaded with the above kneaded product at 120° C. to obtain a pellet. The resulting kneaded product was then heated in a metal mold at 180° C. for 10 minutes to be crosslinked so as to obtain a disk-like molded product having a diameter of 600 mm and...

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Abstract

A chemical mechanical polishing pad having a polishing surface, a non-polishing surface opposite to the polishing surface and a side surface for defining these surfaces, the polishing surface having (i) a first group of grooves which intersect a single virtual straight line extending from the center toward the peripheral portion of the polishing surface and do not cross one another, or a single first spiral groove which expands gradually from the center portion toward the peripheral portion of the polishing surface, and (ii) a second group of grooves which extend from the center portion toward the peripheral portion of the polishing surface, intersect the first group of grooves or the first spiral groove and do not cross one another. Since this chemical mechanical polishing pad fully suppresses the occurrence of a scratch on the polished surface and has an excellent polishing rate, it is advantageously used in a chemical mechanical polishing method.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a chemical mechanical polishing pad which can be advantageously used in a chemical mechanical polishing step and a chemical mechanical polishing method making use of the polishing pad. DESCRIPTION OF THE PRIOR ART [0002] In the manufacture of a semiconductor device, chemical mechanical polishing (CMP) is attracting much attention as a polishing technique capable of forming an extremely flat surface. Chemical mechanical polishing is a technique for polishing by letting an aqueous dispersion for chemical mechanical polishing, for example, an aqueous dispersion of abrasive grains flow down over the surface of a chemical mechanical polishing pad while the polishing pad and the surface to be polished are brought into slide contact with each other. It is known that the polishing result is greatly affected by the performance characteristic and properties of the polishing pad in this chemical mechanical polishing. [0003] Heretof...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B24B37/04B24D13/14
CPCB24B37/26H01L21/304
Inventor SHIHO, HIROSHITANO, HIROYUKIHOSAKA, YUKIONISHIMURA, HIDEKI
Owner JSR CORPORATIOON
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