Sputtering apparatus and manufacturing method of metal layer/metal compound layer by using thereof

Abstract

A sputtering apparatus is provided. The sputtering apparatus comprises cooling water system having a temperature-controlling device for controlling the temperature of the sidewalls of the reaction chamber. During the deposition process of titanium / titanium nitride, the sidewall temperature of the chamber is controlled at about 50° C.˜70° C. for reducing the difference of temperature distribution in the chamber so that the reaction temperature within the reaction chamber can be rendered substantially uniform.

Description

CROSS-REFERENCE TO RELATED APPLICATION [0001] This application is a divisional of a prior application, Ser. No. 10 / 604,857, filed Aug. 22, 2003.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a manufacturing process of semiconductor device. More particularly, the present invention relates to a sputtering apparatus and a manufacturing method of metal / metal compound layer by using the sputtering apparatus. [0004] 2. Description of Related Art [0005] In a process of semiconductor metallization, due to ever increased high degree of integration, it is often required to form a structure with multilevel interconnects, where each metal layer is insulated from the other layers via insulation layers, and different metal layers are connected with conductive plugs. [0006] Aluminum and tungsten are so far the most important and frequently used metals in metallization processes. In prior art, aluminum is formed via magnetron DC sputtering and, ...

AI Technical Summary

Benefits of technology

[0010] In view of the foregoing, the present invention provides an apparatus and a manufacturing method of metal layer, for reducing the deposition of titanium nitride particles, avoiding adhesion of titanium nitride particles, and to improve adhesive property of titanium and titanium nitride.

[0011] According to one object of the present invention is to provide a sputtering apparatus capable of maintaining the reaction temperature within the chamber substantially uniform.

[0012] According to another object of the present invention is to provide a water-cooling system that is capable of controlling the inner sidewall of the chamber for rendering the reaction temperature within the chamber substantially uniform.

Problems solved by technology

However, aluminum causes a phenomenon of spiking, while tungsten is not desirable due to its adhesive property on substrates.

However, all of the forgoing methods fail to effectively reduce the deposition of titanium nitride particles and have problems such as high costs and low productivity.

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