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Nano-wire in-situ stretching device in scanning electron microscope and method therefor

An in-situ stretching and scanning electron microscope technology, which is applied in measurement devices, instruments, scientific instruments, etc., can solve the problems of difficulty in application, complicated control and operating system, and unfavorable popularization and promotion, and achieves controllable strain rate, convenient control, simple structure

Inactive Publication Date: 2007-07-11
BEIJING UNIV OF TECH
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Problems solved by technology

This method integrates several precision devices to work at the same time, the control and operating system are complicated, and high experimental technology is required to obtain reliable experimental data, which is not conducive to popularization.
At the same time, due to the thinner tip of the AFM, it is difficult to fix the nanowires on the tip. This method is difficult to apply to thicker nanowires or stronger nanowires.

Method used

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  • Nano-wire in-situ stretching device in scanning electron microscope and method therefor
  • Nano-wire in-situ stretching device in scanning electron microscope and method therefor
  • Nano-wire in-situ stretching device in scanning electron microscope and method therefor

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Embodiment Construction

[0023] The present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0024] The nanowire in-situ stretching device in the scanning electron microscope is designed according to the FEI Quanta 200 environmental scanning electron microscope and the JEOL JSM 6500F field emission scanning electron microscope. In the sample chamber of the scanning electron microscope, the grade of bimetallic sheet selected is 5J20110, with a ratio of 20.8 / 10 to bending. -6 ·℃ -1, The linear heating range of the heater is 0-350 °C, the control accuracy is 0.1 °C, the adjustment distance between the two sample stages at room temperature is kept ≤2μm, the maximum linear displacement range is 5mm, and the displacement accuracy is 0.2μm. The prepared SiC nanowires were ultrasonically dispersed in acetone for 60 min, the nanowires suspended in acetone were randomly dispersed on the two sample stages of the stretching device, and the microman...

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Abstract

The invention relates to a scanning electron microscope nanometer line original tensile device and method. It controls the heater to make the dual metal plate bending, drive slide of dual metal plate moving linearly along the track to both sides, tensile the nanometer line fastened on the sample bench, recording the tensile acted plastic tensile deformation and fracture failure, matching the dynamic performance of the nanometer line and the microstructure change, revealing the tensile deformation mechanism, fracture failure mode, brittle-ductile transition and so on of one dimension nanometer dynamic performance. It is simple, easy to control, realizing the original position one line measurement of the nanometer line dynamic feature.

Description

Technical field: [0001] The invention relates to a device and a method for in-situ stretching of nanowires in a scanning electron microscope. Using the scanning electron microscope, the structural changes during the stretching and deformation process of the nanowires can be observed in real time, and the deformation mechanism of the nanowires under the tensile load can be revealed. The brittle-ductile transition method belongs to the field of in-situ measurement of mechanical properties of nanomaterials. Background technique: [0002] With the development of nanotechnology and nanodevices, nanowires are the basic unit of nanodevices. Nanowires not only have good electrical, magnetic, and optical properties, but also are required to carry mechanical loads, transmit forces, and perform motion in devices. Wait. The mechanical response mode and failure form of nanowires under the action of external force, such as brittle fracture or ductile fracture, and the maximum fracture st...

Claims

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Application Information

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IPC IPC(8): G01N3/08G01N13/10
Inventor 韩晓东张跃飞张泽
Owner BEIJING UNIV OF TECH
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